晶格中的缺陷与材料发光性质关系研究进展  被引量:6

Advances in Relationship Between Lattice Defects and Luminescent Characteristics

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作  者:张盼 白宇星 武莉[1] 孔勇发[1] 张毅[2] 许京军[1] ZHANG Pan;BAI Yu-xing;WU Li;KONG Yong-fa;ZHANG Yi;XU Jing-jun(School of Physics,Nankai University,Tianjin 300071,China;School of Electronic Information and Optical Engineering,Nankai University,Tianjin 300071,China)

机构地区:[1]南开大学物理科学学院,天津300071 [2]南开大学电子信息与光学工程学院,天津300071

出  处:《发光学报》2022年第9期1361-1379,共19页Chinese Journal of Luminescence

基  金:国家自然科学基金(11774187,U1902218)资助项目。

摘  要:发光材料的优化与改善一直是相关领域研究的热点。形成于晶体生长/制备过程中的晶格缺陷与载流子迁移存在密切关联,可通过人工调控缺陷的方式对载流子的迁移进行调控,进而改善其发光性能,这对发光材料的开发与应用具有重要意义。研究发现,通过在特定三维网状结构中掺杂过渡或稀土金属离子,因不等价阳离子取代而产生的相应点缺陷,不仅可以有效促进变价激活离子的价态降低,而且还会协同本征缺陷形成功能性陷阱能级,实现载流子的存储和在外界激励下响应的动态平衡,进而改善材料的发光性能甚至带来新的发光特性。本文较系统地梳理了点缺陷与样品发光性能之间的内在耦合机制和调控方式,以期对后续新型光电功能晶态材料的研发和探索提供有意义的启示。The optimization and improvement of luminescent materials have long been a focus of re⁃lated research fields.The carrier migration has close relationship with lattice defects which are formed during the crystal growth or preparation.Artificial defect control is an important method to regulate carrier migration and improve the luminescent properties,which is of great significance to the development and application of luminescent materials.In previous studies,by doping transition or rare earth metal ions in a specific rigid three-dimensional structure,the point defects caused by non-equivalent cationic substitution can not only effectively promote the self-reduction of activators,but also cooperate with the intrinsic defects to form functional trap levels.These energy levels can trap carriers and realize the dynamic balance of carrier storage and response to external excitation,which effectively improves the luminescence performance of the materials and even brings novel opti⁃cal properties.This review systematically summarizes the internal coupling mechanism and control methods between point defects and luminescence properties,and provides valuable enlightenment for the subsequent development and exploration of novel optical-electronic functional materials.

关 键 词:晶格缺陷 自还原 热稳定性 长余辉发光 应力发光 

分 类 号:O482.31[理学—固体物理]

 

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