如何利用真空标度(VRBE)能级图理性设计与探索长余辉发光与光存储材料  

How to Rational Design and Explore Afterglow and Storage Phosphors by Using Vacuum Referred Binding Energy(VRBE)Diagram

作　　者：吕天帅 LYU Tian-shuai(Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing,Institute of Luminescent Materials and Information Displays,College of Materials Science and Engineering,Huaqiao University,Xiamen 361021,China)

机构地区：[1]华侨大学发光材料与信息显示研究院,材料科学与工程学院,厦门市光电材料及其先进制造重点实验室,福建厦门361021

出　　处：《发光学报》2022年第9期1413-1427,共15页Chinese Journal of Luminescence

基　　金：国家自然科学基金(12104170);中央高校基本科研业务费专项资金(ZQN-1023);华侨大学人才引进经费项目(21BS106);华侨大学分析测试中心资助项目。

摘　　要：简要介绍了无机长余辉发光材料与光存储材料的概念及其起源和研究现状。简述了三种经典商业长余辉发光与光存储材料。基于这三种商业发光材料,分析了理性设计这类材料存在的问题,并介绍如何基于真空标度能级图(Vacuum referred binding energy(VRBE)diagram)来设计长余辉发光与光存储材料的策略。首先,介绍了真空标度能级图的定义和构建其所需要的模型参数和实验光谱数据。在稀土离子掺杂无机化合物真空标度能级图的基础上,阐述二价和三价铋离子的真空标度能级位置。其次,基于YPO4模型材料的真空标度能级图,介绍电子释放模型和空穴释放模型的定义和区别。最后,结合稀土离子和铋离子掺杂REPO4(RE=La,Y,Lu)及NaYGeO_(4)家族化合物的真空标度能级图,简要论述如何设计电子与空穴陷阱中心以及如何调控电子或空穴陷阱的深度。真空标度能级图对讨论载流子的捕获与释放以及理性设计与探索无机长余辉发光与光存储材料具有一定的指导意义。The definition,history,and developments of inorganic afterglow and storage phosphors will be shortly introduced.Three state-of-the-art phosphors of SrAl_(2)O_(4)∶Eu^(2+),Dy^(3+),BaFBr(Ⅰ)∶Eu^(2+),and Al_(2)O_(3)∶C chip will be first introduced.Based on the above three state-of-the-art phosphors,the issues to the rational design of afterglow and storage phosphors will be shortly analyzed.This work will demonstrate a strategy that how to rational design of inorganic afterglow and storage phosphors based on a so-called vacuum referred binding energy(VRBE)diagram.Firstly,we will shortly intro⁃duce what is the vacuum referred binding energy diagram and how it can be constructed by combin⁃ing the VRBE model required parameters and experimental spectroscopy data.In a VRBE diagram for an inorganic compound including the level locations of lanthanides,the VRBE in the ground or excited states of Bi^(2+)and Bi^(3+)will be discussed and added.Secondly,based on the VRBE diagram of the model YPO_(4) compound,the definition and difference of an electron release model and a hole release model will be shortly introduced.Finally,how to rational design of electron or hole captur⁃ing centres and how to tailor their trapping depths will be demonstrated by utilizing the lanthanides and bismuth doped REPO_(4)(RE=La,Y,Lu)and the NaYGeO_(4) family compounds.The constructed VRBE diagrams for different inorganic compounds will help us to identify and discuss charge carrier trapping and release processes,therefore promoting the development of inorganic afterglow and stor⁃age phosphors in a design way instead of by a trial-and-error method.

关 键 词：真空标度能级图 稀土离子 Bi^(3+) Bi^(2+) 长余辉发光 光存储材料 

分 类 号：O482.31[理学—固体物理]