Efficiently band-tailored type-Ⅲ van der Waals heterostructure for tunnel diodes and optoelectronic devices  

作　　者：Xiangna Cong Yue Zheng Fu Huang Qi You Jian Tang Feier Fang Ke Jiang Cheng Han Yumeng Shi 

机构地区：[1]International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China [2]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics&Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China

出　　处：《Nano Research》2022年第9期8442-8450,共9页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(No.62004128);Fundamental Research Foundation of Shenzhen(No.JCYJ20190808152607389);the technical support from the Photonics Center of Shenzhen University.

摘　　要：Broken-gap(type-Ⅲ)two-dimensional(2D)van der Waals heterostructures(vdWHs)offer an ideal platform for interband tunneling devices due to their broken-gap band offset and sharp band edge.Here,we demonstrate an efficient control of energy band alignment in a typical type-ⅢvdWH,which is composed of vertically-stacked molybdenum telluride(MoTe2)and tin diselenide(SnSe2),via both electrostatic and optical modulation.By a single electrostatic gating with hexagonal boron nitride(hBN)as the dielectric,a variety of electrical transport characteristics including forward rectifying,Zener tunneling,and backward rectifying are realized on the same heterojunction at low gate voltages of±1 V.In particular,the heterostructure can function as an Esaki tunnel diode with a room-temperature negative differential resistance.This great tunability originates from the atomicallyflat and inert surface of h-BN that significantly suppresses the interfacial trap scattering and strain effects.Upon the illumination of an 885 nm laser,the band alignment of heterojunction can be further tuned to facilitate the direct tunneling of photogenerated charge carriers,which leads to a high photocurrent on/off ratio of>105 and a competitive photodetectivity of 1.03×1012 Jones at zero bias.Moreover,the open-circuit voltage of irradiated heterojunction can be switched from positive to negative at opposite gate voltages,revealing a transition from accumulation mode to depletion mode.Our findings not only promise a simple strategy to tailor the bands of type-ⅢvdWHs but also provide an in-depth understanding of interlayer tunneling for future low-power electronic and optoelectronic applications.

关 键 词：broken-gap(type-Ⅲ)heterostructure band tailoring single electrostatic gating infrared photodetector photovoltaic effects 

分 类 号：TN312.2[电子电信—物理电子学]