Development and characterization of photovoltaic tandemjunction nanowires using electron-beam-induced current measurements  

作　　者：Lukas Hrachowina Enrique Barrigón Magnus T.Borgström 

机构地区：[1]NanoLund and Divison of Solid State Physics,Lund University,Box 118,22100 Lund,Sweden [2]Universidad de Málaga,Andalucía Tech,Departamento de Física Aplicada Ⅰ,Campus de Teatinos,s/n,Málaga 29071,Spain

出　　处：《Nano Research》2022年第9期8510-8515,共6页纳米研究（英文版）

基　　金：NanoLund,Myfab,the Swedish Energy Agency,Swedish Research council,and the Knut and Alice Wallenberg Foundation(No.2016-0089).

摘　　要：Nanowires have many interesting properties that are of advantage for solar cells,such as the epitaxial combination of latticemismatched materials without plastic deformation.This could be utilized for the synthesis of axial tandem-junction nanowire solar cells with high efficiency at low material cost.Electron-beam-induced current measurements have been used to optimize the performance of single-junction nanowire solar cells.Here,we use electron-beam-induced current measurements to break the barrier to photovoltaic tandem-junction nanowires.In particular,we identify and subsequently prevent the occurrence of a parasitic junction when combining an InP n-i-p junction with a tunnel diode.Furthermore,we demonstrate how to use optical and electrical biases to individually measure the electron-beam-induced current of both sub-cells of photovoltaic tandem-junction nanowires.We show that with an applied voltage in forward direction,all junctions can be analyzed simultaneously.The development of this characterization technique enables further optimization of tandem-junction nanowire solar cells.

关 键 词：Ⅲ-Ⅴnanowire nanowire solar cell tandem-junction Esaki tunnel diode electron-beam induced current(EBIC) 

分 类 号：TB383[一般工业技术—材料科学与工程]