A controllable fabrication improved silicon nanowire array sensor on(111)SOI for accurate bio-analysis application  

作　　者：Zicheng Lu Hong Zhou Yi Wang Yanxiang Liu Tie Li 

机构地区：[1]Science and Technology on Micro-system Laboratory,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]University of Chinese Academy of Sciences(UCAS),Beijing 100190,China

出　　处：《Nano Research》2022年第8期7468-7475,共8页纳米研究（英文版）

基　　金：the support from the National Key Research and Development Program of China(Nos.2018YFA0208500 and 2017YFA0207103).

摘　　要：Silicon nanowire field-effect transistor(SiNW-FET)sensors possess the ability of rapid response,real-time,and label-free detection with high sensitivity and selectivity in the analysis of charged molecules.Their nano-scale size makes them well suited for ultralow detection of charged molecules,but also brings the uniformity fabrication challenging,thus limiting their large-scale application.By a horizontal control approach,highly controllable silicon nanowires arrays at the top of the silicon-on-insulator(SOI)wafer(T-SiNW)were developed in our previous work.To further improve the device uniformity,here a novel SiNW fabricated approach was carefully designed by the combination of horizontal and vertical control.The new silicon nanowires appeared at the bottom of the top silicon layer(B-SiNW).The B-SiNW has a relatively low requirement on the fabrication process and better device uniformity compared to T-SiNW.These improvements resulted in the B-SiNW device with a lower current fluctuation(4.1 nA with 5.1%variations)in the flowing liquid,compared to the T-SiNW device(4.4 nA with 11%variations).Further,in quantitative detection of 40 ng/mL MMP-9,the B-SiNW sensors provided larger signals and lower fluctuation(normalized average response value:0.57 with 4.2%variations),compared to the T-SiNW sensors(0.41 with 12.1%variations),thus indicating a more accurate bio-analysis application of the B-SiNW sensor.This work advances the nanowire sensor technology a step closer toward large-scale application to create stable sensing platforms in disease diagnosis and monitoring.

关 键 词：silicon nanowire TOP-DOWN (111)silicon-on-insulator triangular cross-section quantitative detection 

分 类 号：TB383[一般工业技术—材料科学与工程] TP212[自动化与计算机技术—检测技术与自动化装置]