High-performance solar-blind photodetector arrays constructed from Sn-doped Ga_(2)O_(3)microwires via patterned electrodes  

作　　者：Ya-Cong Lu Zhen-Feng Zhang Xun Yang Gao-Hang He Chao-Nan Lin Xue-Xia Chen Jin-Hao ZangWen-Bo Zhao Yan-Cheng Chen Lei-Lei Zhang Yi-Zhe Li Chong-Xin Shan 

机构地区：[1]Henan Key Laboratory of Diamond Optoelectronic Material and Devices,Key Laboratory of Material physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China [2]Vacuum Interconnected Nanotech Workstation(Nano-X),Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China

出　　处：《Nano Research》2022年第8期7631-7638,共8页纳米研究（英文版）

基　　金：the National Natural Science Foundation of China(Nos.61804136,U1804155,and 62027816).

摘　　要：Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost.Although semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than satisfactory.Herein,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V.Moreover,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes method.And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging system.The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.

关 键 词：Sn-doped Ga_(2)O_(3) MICROWIRES photodetector linear array solar-blind imaging 

分 类 号：TN215[电子电信—物理电子学]