应用GaN HEMT的宽输入堆叠半桥LLC变换器设计  

Design of Stacked Half-bridge LLC Converter with Wide Input Voltage Range Using GaN HEMTs

作　　者：林润韬 王建军 赵晶 万志华 LIN Runtao;WANG Jianjun;ZHAO Jing;WAN Zhihua(Beijing Institute of Space Launch Technology,China Academy of Launch Vehicle Technology,Beijing 100076,China)

机构地区：[1]中国运载火箭技术研究院北京航天发射技术研究所,北京100076

出　　处：《电源学报》2022年第5期75-83,共9页Journal of Power Supply

摘　　要：对于航天发射系统中的地面支持设备与特种重型车辆,锂电池组等新兴供电单元的应用使得车辆母线电压不断提高。这种电压提升在提高电池组充放电速度的同时,也对辅助电源的输入电压范围提出了更宽的要求。同时,为了提高电源开关频率与设备效率,将氮化镓高电子迁移率晶体管GaN HEMT(gallium nitride high electron mobility transistor)器件引入到LLC变换器设计中。为有效解决GaN HEMT耐压带来的应用限制,使用堆叠半桥三电平拓扑实现器件分压。通过PSIM进行仿真验证,证明该拓扑的设计有效性。最终制作2 kW的实物样机,实现400~800 V电压输入与25~40 V电压输出,峰值功率达到93.89%。For the ground support equipment and special heavy vehicles used in space launch systems, the applications of burgeoning power supply units such as lithium battery pack continuously increase the vehicle bus voltage.This voltage increase not only improves the charging and discharging speed of the battery pack, but also puts forward requirements for a wider input voltage range of the auxiliary power supply. Meanwhile, in order to improve the power supply’s switching frequency and the equipment efficiency, gallium nitride high electron mobility transistor(GaN HEMT) is introduced into the design of LLC converters. Aimed at effectively solving the application limit on the GaN HEMT withstand voltage, the device partial voltage is realized by using the stacked half-bridge three-level topology. The effectiveness of the designed topology is demonstrated by simulation verification with PSIM. Finally, a 2 kW prototype was fabricated to achieve an input voltage range of 400~800 V and an output voltage range of 25~40 V, with a peak efficiency of93.89%.

关 键 词：氮化镓高电子迁移率晶体管 堆叠半桥 LLC 宽电压输入 

分 类 号：TM46[电气工程—电器]