SiO_(2)掺杂对ZnO-Bi_(2)O_(3)基压敏陶瓷电学性能的影响  

Effect of SiO_(2)Doping on Electrical Properties of ZnO-Bi_(2)O_(3)Based Varistor Ceramics

作　　者：刘建科[1] 陈姣姣 曹文斌 苏锦锋 李智智 徐荣凯 刘士花 LIU Jianke;CHEN Jiaojiao;CAO Wenbin;SU Jinfeng;LI Zhizhi;XU Rongkai;LIU Shihua(Research Center for Semiconductor Materials and Devices,Shaanxi University of Science and Technology,Xi′an 710021,China)

机构地区：[1]陕西科技大学半导体材料与器件中心,西安710021

出　　处：《硅酸盐学报》2022年第9期2366-2373,共8页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51802183)资助。

摘　　要：在ZnO-Bi_(2)O_(3)-MnO_(2)-Cr2O_(3)基础上掺杂不同含量的SiO_(2),采用传统固相烧结法制备ZnO压敏陶瓷。采用X射线衍射仪、扫描电子显微镜研究了ZnO压敏陶瓷的物相组成和微观结构。利用数字源表、电感电容电阻测试仪测试并分析其电学性能。利用电容-电压特性法测试其晶界参数。结果表明:在频率10 kHz附近时,由于极化跟不上外电场变化,相对介电常数急速下降,同时产生相应的损耗峰。随着SiO_(2)掺杂量的增加,损耗角正切(tanδ)先降低后升高,在掺杂量为0时最高,1.0%(摩尔分数)时最低,SiO_(2)的掺杂明显降低了在10^(5)Hz附近的tanδ值。非线性系数(α)随着SiO_(2)掺杂量的增加先增加后减小,在SiO_(2)掺杂量为1.0%时,样品α值达到43.36,晶界势垒高度φ_(b)在10 kHz时为1.98 eV,施主浓度低至2.97×10^(24)m^(-3),同时漏电流I_(L)为0.31μA/cm^(2)。ZnO-Bi_(2)O_(3)-MnO_(2)-Cr_(2)O_(3)varistor ceramics doped with different amounts of silicon dioxide(SiO_(2))were prepared by a conventional solid-phase sintering method.The phase composition and microstructure of the samples were investigated by X-ray diffraction and scanning electron microscopy.The electrical properties were measured by sourcemetry and inductance capacitance resistance,and the double Schottky barrier parameters were measured by a capacitance-voltage characteristic method.The results show that when the frequency is near 10^(5)Hz,the relative dielectric constant(ε_(r))decreases rapidly since the polarization cannot change with the frequency of electric field,resulting in the corresponding loss peak.The loss peak(tanδ)firstly decreases and then increases with the increase of the doping amount,and its maximum tanδis obtained witrhout SiO_(2)and the minimum tanδis achieved at 1.0%SiO_(2).The value of tanδat a frequency of 10^(5) Hz is reduced by doping SiO_(2).The nonlinear coefficient firstly increases and then decreases with the increase of SiO_(2)doping amount.The value ofαreaches 43.36,the value of φ_(b) is 1.98 eV at 10 kHz,the donor concentration is 2.97×10^(24)m^(-3),and the leakage current I_(L) is 0.31μA/cm2 at SiO_(2)doping amount of 1.0%.

关 键 词：二氧化硅 氧化锌 压敏陶瓷 晶界势垒 非线性系数 电容-电压特性法 

分 类 号：TQ174[化学工程—陶瓷工业]