Co纳米颗粒低温催化合成3C-SiC纳米线及其光致发光性能  

Low-Temperature Synthesis and Photoluminescence Properties of 3C-SiC Nanowires via Co Nanoparticle Catalytic Reaction

作　　者：王慧芳 张海军[2] 郝世明 李海生 毕玉保[4] 姜威 柳菊荟 WANG Huifang;ZHANG Haijun;HAO Shiming;LI Haisheng;BI Yubao;JIANG Wei;LIU Juhui(The Cultivation Base of Shanxi Key Laboratory of Mining Area Ecological Restoration and Solid Wastes Utilization,Shanxi Institute of Technology,Yangquan 045000,Shanxi,China;The State Key Laboratory of Refractories and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China;School of Physics and Engineering,Henan University of Science and Technology,Luoyang 471003,Henan,China;High Temperature Materials Institute,Henan University of Science and Technology,Luoyang 471003,Henan,China)

机构地区：[1]山西工程技术学院-矿区生态修复与固废资源化省市共建山西省重点实验室培育基地,山西阳泉045000 [2]武汉科技大学省部共建耐火材料与冶金国家重点实验室,武汉430081 [3]河南科技大学物理工程学院,河南洛阳471003 [4]河南科技大学高温材料研究院,河南洛阳471003

出　　处：《硅酸盐学报》2022年第9期2483-2492,共10页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(11404098);山西省基础研究计划自由探索类面上项目(20210302123427);山西省留学回国人员科技活动择优资助项目(20220038);山西省回国留学人员科研资助(2020-151);省部共建耐火材料与冶金国家重点实验室开放基金(G202006,G202008)。

摘　　要：以膨胀石墨和硅粉为原料、Co(NO_(3))_(3)·6H_(2)O为催化剂前驱体,在流动Ar气中合成了3C-SiC纳米线。研究了反应温度、催化剂用量对合成3C-SiC粉体反应的影响。用第一性原理计算分析了Co纳米颗粒的催化机理,研究了3C-SiC纳米线的光致发光性能。结果表明:催化剂Co的引入降低了硅粉碳化反应生成SiC的开始反应温度和完全反应温度。催化剂Co的加入量为3%(质量分数)时,1573 K保温3 h反应后合成的3C-SiC纳米线的直径为50~60 nm,长度约几十微米,其生长机理主要为气-固反应。Co纳米颗粒与反应物之间的吸附作用降低了C=C键、C—O键和Si—O键的结合,从而促进了SiC的成核与生长。激发波长为254 nm时,3C-SiC纳米线的室温光致发光谱的特征峰在307 nm,该纳米线在光电子纳米材料领域有良好的应用前景。3C-SiC nanowires were synthesized in Ar atomosphere via Co nanoparticle catalytic reaction with expanded graphite and silicon powders as raw materials and Co(NO_(3))_(2)·6H_(2)O as a catalyst precursor.The effects of reaction temperature and catalyst addition on the formation of SiC nanowires were investigated.The phase composition and microstructure of the as-prepared products were characterized by X-ray diffraction,scanning electron microscopy and transmission electron microscopy.The optoelectronic property of as-prepared 3C-SiC nanowires was analyzed.The results show that Co catalyst promotes the growth of 3C-SiC nanowires and decreases the complete reaction temperature and the formation temperature.3C-SiC nanowires could be synthesized at 1573 K for 3 h using 3.0%Co as catalysts at C/Si molar ratio of 1:1.The formed 3C-SiC nanowires are approximately 50-60 nm in diameter and tens micrometers in length.According to the results by the first-principles calculation,the activities of the reactants are increased via dwindling the bonding strength of C=C,Si—O and C—O bonds.The room-temperature PL spectra indicate that the as-synthesized 3C-SiC nanowires have a special emission at 307 nm(4.04 eV),which could be used as a potential material for optoelectronic nanodevices.

关 键 词：3C-碳化硅纳米线 光致发光 第一性原理计算 钴纳米颗粒催化剂 膨胀石墨 

分 类 号：TQ174.7[化学工程—陶瓷工业]