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作 者:郭伟明[1] 何盛金 詹创添 薛佳祥 朱林林 吴利翔 马海滨 翟剑晗 陈原彬 林华泰 GUO Weiming;HE Shengjin;ZHAN Chuangtian;XUE Jiaxiang;ZHU Linlin;WU Lixiang;MA Haibin;ZHAI Jianhan;CHEN Yuanbin;LIN Huatai(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China;China Nuclear Power Technology Research Institute,Shenzhen 518026,Guangdong,China)
机构地区:[1]广东工业大学机电工程学院,广州510006 [2]中广核研究院有限公司,广东深圳518026
出 处:《硅酸盐学报》2022年第9期2527-2537,共11页Journal of The Chinese Ceramic Society
基 金:国家自然科学基金面上项目(52072077)。
摘 要:由于高脆性、高硬度、高耐磨等特点,SiC陶瓷较难直接加工成大型结构复杂的零部件,发展连接技术是推动其工程化应用的主要方法之一。在众多连接方法中,以SiC为连接层主相的连接方法制备的接头具有连接强度高、接头应力小、抗辐照、抗化学腐蚀和耐高温等优势,成为SiC陶瓷连接重点关注的技术,包括纳米浸渍瞬态共晶相连接(NITE相连接)、硅—碳反应连接(Si—C反应连接)和前驱体连接。本工作从连接机理、连接工艺、接头成分、微观结构和连接强度等方面综述了上述3种以SiC为连接层主相的SiC陶瓷及其复合材料的连接技术,并对3种连接技术的优缺点进行了对比分析,最后对发展趋势进行了展望。SiC ceramics are difficult to be directly processed into large and complex components due to their high brittleness,high hardness and high wear resistance.Therefore,joining technology is one of the developed methods to facilitate the engineering application of SiC ceramics.Among various joining methods,the joints obtained by the joining method using SiC as a major phase of the joining layer have some advantages like high joint strength,low joint stress,radiation resistance,chemical corrosion resistance and high temperature resistance,thus becoming the key technologies for SiC ceramic joining,i.e.,nano-infiltrated transient eutectoid phase joining(i.e.,NITE phase joining),silicon-carbon reaction joining(i.e.,Si—C reaction joining)and precursor joining.This review represented three kinds of SiC ceramic joining technologies above using SiC as a major phase of the joining layer from the aspects of joining mechanism,joining process,joint composition,microstructure and joining strength.The advantages and deficiencies of the three kinds of joining technologies were analyzed and compared.In addition,the future development was also prospected.
关 键 词:碳化硅陶瓷连接 纳米浸渍瞬态共晶相连接 硅—碳反应连接 前驱体连接
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