Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform  

作　　者：Hongchao Zhang Xiangyue Ma Chuanpeng Jiang Jialiang Yin Shuqin Lyu Shiyang Lu Xiantao Shang Bowen Man Cong Zhang Dandan Li Shuhui Li Wenjing Chen Hongxi Liu Gefei Wang Kaihua Cao Zhaohao Wang Weisheng Zhao 

机构地区：[1]Fert Beijing Institute,School of Integrated Science and Engineering,Beihang University,Beijing 100191,China [2]Truth Memory Tech.Corporation,Beijing 100088,China [3]Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China

出　　处：《Journal of Semiconductors》2022年第10期64-72,共9页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300);National Natural Science Foundation of China(Nos.62001014 and 62171013)。

摘　　要：We demonstrate in-plane field-free-switching spin-orbit torque(SOT)magnetic tunnel junction(MTJ)devices that are capable of low switching current density,fast speed,high reliability,and,most importantly,manufactured uniformly by the 200-mm-wafer platform.The performance of the devices is systematically studied,including their magnetic properties,switch-ing behaviors,endurance and data retention.The successful integration of SOT devices within the 200-mm-wafer manufactur-ing platform provides a feasible way to industrialize SOT MRAMs.It is expected to obtain excellent performance of the devices by further optimizing the MTJ film stacks and the corresponding fabrication processes in the future.

关 键 词：SOT MTJ low switching current densities 200-mm-wafer platform ENDURANCE data retention 

分 类 号：TN305[电子电信—物理电子学] O469[理学—凝聚态物理]