Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability  

作　　者：Shiqing Zhang Bing Song Shujing Jia Rongrong Cao Sen Liu Hui Xu Qingjiang Li 

机构地区：[1]College of Electronic Science and Technology,National University of Defense Technology,Changsha 410073,China [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

出　　处：《Journal of Semiconductors》2022年第10期97-102,共6页半导体学报（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.61974164,62074166,61804181,62004219,and 6200422).

摘　　要：Selector devices are indispensable components of large-scale memristor array systems.The thereinto,ovonic threshold switching(OTS)selector is one of the most suitable candidates for selector devices,owing to its high selectivity and scalability.However,OTS selectors suffer from poor endurance and stability which are persistent tricky problems for applica-tion.Here,we report on a multilayer OTS selector based on simple GeSe and doped-GeSe.The experimental results show im-proving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.5%.The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers.These develop-ments pave the way towards tuning a new class of OTS materials engineering,ensuring improvement of electrical perform-ance.

关 键 词：ovonic threshold switch SELECTOR GeSe multilayer structure ENDURANCE stability 

分 类 号：TN60[电子电信—电路与系统]