带锥台托盘KH_(2)PO_(4)晶体生长与位错分布  

The growth and dislocation distribution of KH_(2)PO_(4) crystal through a frustum platform

作　　者：胡今三 李明伟[1] 王鹏飞[1] HU Jinsan;LI Mingwei;WANG Pengfei(School of Energy and Power Engineering,Chongqing University,Chongqing 400044,P.R.China)

机构地区：[1]重庆大学能源与动力工程学院,重庆400044

出　　处：《重庆大学学报》2022年第9期106-114,共9页Journal of Chongqing University

基　　金：国家自然科学基金资助项目(51476014)。

摘　　要：利用光学显微镜对采用锥台托盘及传统平托盘生长的晶体进行位错腐蚀观察,发现锥台托盘生长的晶体上半部分位错分布与平托盘生长的晶体相似,部分区域位错密度低于平托盘生长的晶体。对于锥台托盘生长的晶体下半部分,其柱面位错缺陷很少,位错集中在与锥台直接接触的下锥面。下锥面的存在阻止了柱面底部新位错的形成,为柱面生长提供了更好的生长条件。硬度分析表明使用锥台托盘一定程度上提高了晶体结晶完整性。The dislocation etch of the crystal grown by frustum platform and ordinary flat platform was observed by optical microscope.It was found that the dislocation distribution in the upper half of the crystal grown by the frustum platform was similar to that of the crystal grown by the flat platform,and its dislocation density in some areas was lower than that of the crystal grown on the flat platform.For the lower half of the crystal grown on the frustum platform,there were few dislocation defects on the prismatic faces,and the dislocations concentrated on the lower pyramidal surface that was in direct contact with the frustum.The existence of the lower pyramidal faces prevented the formation of new dislocations at the bottom of the prismatic faces and provided better growth conditions for the growth of the prismatic faces.Hardness analysis showed that the use of the frustum platform contributed to the crystalline perfection of the prismatic faces partly.

关 键 词：KDP晶体 化学腐蚀 位错 硬度检测 

分 类 号：O782.1[理学—晶体学]