超紧凑硅基混合表面等离激元光场窄化器件的实验研究  

Experimental research on ultracompact silicon hybrid plasmonic nanofocusing device

作　　者：孙鹏斐 朱科建 许鹏飞 刘兴鹏 孙堂友 李海鸥[2] 周治平[1,3] Sun Peng-Fei;Zhu Ke-Jian;Xu Peng-Fei;Liu Xing-Peng;Sun Tang-You;Li Hai-Ou;Zhou Zhi-Ping(State Key Laboratory of Advanced Optical Communications Systems and Networks,School of Electronics,Peking University,Beijing 100871,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China;Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China)

机构地区：[1]北京大学电子学院区域光纤通信网与新型光通信系统国家重点实验室,北京100871 [2]桂林电子科技大学广西精密导航技术与应用重点实验室,桂林541004 [3]中国科学院上海光学精密机械研究所,上海201800

出　　处：《物理学报》2022年第19期266-271,共6页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2019YFB2205200);国家自然科学基金(批准号:61775005,62035001)资助的课题。

摘　　要：本文设计、制备了一种基于硅基光电子技术的超紧凑混合表面等离激元光场窄化器件,并验证了器件的纳米聚焦性能.实验结果表明,该光场窄化器件利用了长度约为1.23μm的锥形渐变结构,将硅条形波导中的光场聚焦到硅基混合表面等离激元波导中,在1550 nm的近红外波段最高可实现约20倍的非谐振光场增强效应.结构简单,性能优异的硅基混合表面等离激元光场窄化器件,在光场操控、光传感、非线性光学器件、光相变存储等领域中具有潜在的应用价值.Silicon-based optoelectronics,using the mature silicon-based microelectronic complementary metal oxide semiconductor(CMOS) manufacturing process,is a large-scale optoelectronic integration platform that has attracted much attention.Surface plasmonic devices have also received extensive attention in the past decades,and especially the silicon-based surface plasmonic nano focusing devices have become a research hotspot.Typical nanofocusing structures include chirped surface gratings,plasmonic Fresnel zone plate,nano-slit array,tapered metal tips.However,there occur some inevitable problems in these devices,such as the fine structure being too complex to be fabricated and too large transmission loss of metal slot waveguide.In this work,an ultra-compact hybrid surface plasmon nanofocusing device is designed and fabricated by the silicon-based optoelectronic technology,and the nanofocusing performance of the device is also experimentally verified.The hybrid surface plasmon nanofocusing devices are fabricated on a silicon-on-insulator(SOI) wafer by electron beam lithography(EBL) system.The silicon wire waveguides,tapers and the thin silicon strips in the middle of nanofocusing regions are patterned in only one step EBL.The gold layer is formed by a deposition and lift-off process,and then a partially etching process is introduced to make the thickness of the middle thin silicon strips the same as that of the gold layer.With a 1.23-μm-long tapered structure,our nanofocusing devices focus the light field of a silicon strip waveguide into a hybrid surface plasmon waveguide,making non-resonant optical field increase 20 times in the 1550 nm near-infrared band experimentally.The entire insertion loss is about 4.6 dB,and the mode area of the nanofocusing area is about(λ/n)~2/640 which is over 300 times smaller than that of the input silicon waveguide.When the middle slot silicon waveguide width W=120 nm,the insertion loss reaches a minimum value of 2.8 dB.In our design,we adopt the design of silicon-based hybrid plasmonic w

关 键 词：硅基光电子 硅基混合表面等离激元 片上纳米聚焦 大规模光电子集成 

分 类 号：TN25[电子电信—物理电子学]