基于AlGaN/GaN HEMT的340GHz太赫兹外差探测器和中频放大器集成  

340 GHz Terahertz Heterodyne Detector Based on AlGaN/GaN HEMT Integrated with Intermediate Frequency Amplifier

作　　者：范飞 丁青峰 张金峰 程凯 孙建东 秦华[1,2,3,4] Fan Fei;Ding Qingfeng;Zhang Jinfeng;Cheng Kai;Sun Jiandong;Qin Hua(School of Nano-Tech and Nano-Bionics,University of Scienceand Technology of China,Hefei 230026,China;Key Laboratoryof Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;Jiangsu Provincial Key Laboratory of Nano Devices,Suzhou 215123,China;School of Physical Science and Technology,ShanghaiTechUniversity,Shanghai201210,China;Enkirs Semiconductor,Inc.,Suzhou 215000,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123 [3]江苏省纳米器件重点实验室,江苏苏州215123 [4]上海科技大学物质科学与技术学院,上海201210 [5]苏州晶湛半导体有限公司,江苏苏州215000

出　　处：《微纳电子技术》2022年第9期846-852,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61771466,61775231);江苏省重点研发计划资助项目(BE2018005);中国科学院青年创新促进会资助项目(Y2021089)。

摘　　要：针对具有高输出阻抗的AlGaN/GaN高电子迁移率晶体管(HEMT)太赫兹探测器与商用低噪声放大器阻抗失配、带宽小的问题,采用AlGaN/GaN HEMT太赫兹探测器与AlGaN/GaN HEMT中频放大器的集成方式,搭建了340 GHz太赫兹外差系统,测试集成芯片的带宽、噪声等效功率(NEP)和噪声系数(NF)。结果表明,集成芯片的-3 dB带宽达到15 MHz, 5 MHz以上外差系统的NEP为-131.8 dBm/Hz,且放大链路的NF为0.48 dB。未来可通过AlGaN/GaN HEMT太赫兹探测器和AlGaN/GaN HEMT中频(IF)放大器的单片集成来减小寄生电容,同时优化太赫兹探测器结构,提升AlGaN/GaN HEMT太赫兹单片集成芯片带宽至GHz,推动AlGaN/GaN HEMT太赫兹单片阵列集成探测器发展。Aiming at the problem of impedance mismatch and small bandwidth between AlGaN/GaN high electron mobility transistor(HEMT) terahertz detectors with high output impedance and commercial low-noise amplifiers, with the integration method of AlGaN/GaN HEMT terahertz detector and AlGaN/GaN HEMT intermediate frequency(IF) amplifier, a 340 GHz terahertz heterodyne system was built to test the bandwidth, noise equivalent power(NEP) and noise figure(NF) of the integrated chip. The results show that the-3 dB bandwidth of the integrated chip reaches 15 MHz, the NEP of the heterodyne system is-131.8 dBm/Hz and the NF of the amplification chain is 0.48 dB above 5 MHz. In the future, the monolithic integration of the AlGaN/GaN HEMT terahertz detector and the AlGaN/GaN HEMT IF amplifier can reduce the parasitic capacitance, and optimize the structure of the terahertz detector, which can increase the bandwidth of the AlGaN/GaN HEMT monolithic integrated chip to GHz and promote the development of AlGaN/GaN HEMT terahertz monolithic array integrated detectors.

关 键 词：氮化镓(GaN) 太赫兹探测器 高电子迁移率晶体管(HEMT) 中频(IF)放大器 外差 噪声等效功率(NEP) 

分 类 号：TL814[核科学技术—核技术及应用] TN722.1[电子电信—电路与系统]