应用于弹载SiC MOSFET的RC吸收电路的设计与优化  

The Design and Optimization of RC Snubber Circuits Applied to SiC MOSFETs in Bomb-Mounted Power Supplies

作　　者：张晓娟[1,2] 景博 张劼[1] 王洋 李红波[1] ZHANG Xiaojuan;JING Bo;ZHANG Jie;WANG Yang;LI Hongbo(College of Mechanical Engineering,Xijing University,Xi’an Shaanxi 710123,China;College of Aeronautics Engineering,Air Force Engineering University,Xi’an Shaanxi 710038,China)

机构地区：[1]西京学院机械工程学院,陕西西安710123 [2]空军工程大学航空工程学院,陕西西安710038

出　　处：《电子器件》2022年第4期810-815,共6页Chinese Journal of Electron Devices

基　　金：陕西省教育厅服务地方专项项目(21JC034)。

摘　　要：SiC MOSFET作为新兴的宽禁带半导体,目前在电源设计中被广泛用于取代Si IGBT。然而在弹载电源这类严苛的应用场合,SiC MOSFET关断暂态带来的超调振荡影响了电源输出的稳定性和品质,并且降低了装置的可靠性。在分析SiC MOSFET开关特性及四种无源吸收电路优缺点的基础上,提出了一种针对SiC MOSFET关断暂态的RC吸收电路优化设计方案,给出了系统效率最优情况下的电路参数范围,提升了吸收电路研发的效率。最后,通过400V/20A双脉冲测试电路进行了实验验证。SiC MOSFETs are widely used to replace Si IGBTs as new wide-bandgap semiconductor devices.However,the overshoots and oscillations in the turn-off transient might affect the output stability and quality of power supplies in harsh applications,such as bomb-mounted power supplies,as a result,the reliability of the device would be compromised.Based on the analysis of the switching characteristics of SiC MOSFET,and the advantages and disadvantages of four passive snubber circuits,an optimized design scheme for the RC snubber circuit in the turn-off transient of SiC MOSFET is proposed.The circuit parameter ranges under the optimal system efficiency are determined,which improves the efficiency of the design of the snubber circuit.Finally,experimental verification is performed on 400 V/20 A double pulse test circuit.

关 键 词：SiC MOSFET 过应力 吸收电路 双脉冲测试 

分 类 号：TM564[电气工程—电器]