Growth Behavior of Rubrene Thin Films on Hexagonal Boron Nitride in the Early Stage  

作　　者：Yujia Wei Di Xue Lianlian Ji Jie Lu Qi Wang Xingyu Jiang Yinghui Sun Zi Wang Lizhen Huang Lifeng Chi 

机构地区：[1]Institute of Functional Nano&Soft Materials(FUNSOM),Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices,Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou,Jiangsu 215123,China [2]College of Energy,Soochow Institute for Energy and Materials Innovations,Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province,Soochow University,Suzhou,Jiangsu 215006,China [3]Gusu Laboratory of Materials,Suzhou,Jiangsu 215123,China

出　　处：《Chinese Journal of Chemistry》2022年第11期1298-1304,I0002,共8页中国化学（英文版）

基　　金：The authors acknowledge financial support from the National Key Research and Development Program of China(No.2018YFE0200700);the National Natural Science Foundation of China(Grant Nos.52173176,51773143 and 51821002);Open Research Fund of State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences.

摘　　要：Two-dimensional materials,with an in-plane ordered and dangling-bonding-free surface,are ideal substrates for fabricating high-quality crystalline thin films.Here,we show a systematic study on the growth of a benchmark organic semiconductor,rubrene,on hexagonal boron nitride(h-BN)substrate via physical vapor deposition from the initial amorphous phase to the final crystalline phase;the role of temperature in such transition and the epitaxy relationship between rubrene and h-BN are revealed.With the increase of substrate temperature,the critical thickness of amorphous-crystalline-transition decreases and the morphology of crystalline phase also evolves from porous to terrace-like.When substrate temperature reaches>100℃,the critical thickness reduces to only 0.5 nm and a precise layer-by-layer growth from the very first layer is achieved,which is quite rare for rubrene growing on other substrates.The high ordering can be attributed to the fine epitaxy relationship between rubrene films and the h-BN surface lattice,and this film demonstrates good charge transport ability with a p-type field-effect mobility of>1 cm^(2)·V^(-1)·s^(-1).

关 键 词：Thin films Crystal growth Organic thin film transistors 2D materials Molecular electronics 

分 类 号：O63[理学—高分子化学]