Lateral characteristics improvements of DBR laser diode with tapered Bragg grating  

作　　者：Qi-Qi Wang Li Xu Jie Fan Hai-Zhu Wang Xiao-Hui Ma 王琦琦;徐莉;范杰;王海珠;马晓辉(State Key Laboratory of High-Power Laser Diodes,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]State Key Laboratory of High-Power Laser Diodes,Changchun University of Science and Technology,Changchun 130022,China

出　　处：《Chinese Physics B》2022年第9期307-312,共6页中国物理B（英文版）

基　　金：Project supported by theScienceand Technology Development Plan of Jilin Province,China(Grant Nos.20210201030GX and 20210201089GX).

摘　　要：Broad area semiconductor laser(BAL)has poor lateral beam quality due to lateral mode competition,which limits its application as a high-power optical source.In this work,the distributed Bragg reflector laser diode with tapered grating(TDBR-LD)is studied.By changing the lateral width,the tapered grating increases the loss of high-order lateral modes,thus improving the lateral characteristics of the laser diode.The measuring results show that the TDBR-LD can achieve a single-lobe output under 0.9 A.In contrast to the straight distributed Bragg reflector laser diode(SDBR-LD),the lateral far field divergence of TDBR-LD is measured to be 5.23°at 1 A,representing a 17%decline.The linewidth of TDBR-LD is 0.4 nm at 0.2 A,which is reduced by nearly 43%in comparison with that of SDBR-LD.Meanwhile,both of the devices have a maximum output power value of approximate 470 mW.

关 键 词：tapered Bragg grating ateral beam semiconductor laser 

分 类 号：TN248.4[电子电信—物理电子学]