Degradation and breakdown behaviors of SGTs under repetitive unclamped inductive switching avalanche stress  

作　　者：Chenkai Zhu Linna Zhao Zhuo Yang Xiaofeng Gu 朱晨凯;赵琳娜;杨卓;顾晓峰(Engineering Research Center ofIoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China;Wuxi NCE Power Company,Ltd.,Wuxi 214028,China)

机构地区：[1]Engineering Research Center ofIoT Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China [2]Wuxi NCE Power Company,Ltd.,Wuxi 214028,China

出　　处：《Chinese Physics B》2022年第9期482-487,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61504049);Jiangsu Province Postdoctoral Science Foundation(Grant No.2018K057B);the Fundamental Research Funds for the Central Universities,China(Grant No.JUSRP51510).

摘　　要：The repetitive unclamped inductive switching(UIS)avalanche stress is conducted to investigate the degradation and breakdown behaviors of conventional shield gate trench MOSFET(C-SGT)and P-ring SGT MOSFETs(P-SGT).It is found that the static and dynamic parameters of both devices show different degrees of degradation.Combining experimental and simulation results,the hot holes trapped into the Si/SiO_(2) interface and the increase of crystal lattice temperature should be responsible for the degradation and breakdown behaviors.Moreover,under repetitive UIS avalanche stress,the reliability of P-SGT overcomes that of C-SGT,benefitting from the decreasing of the impact ionization rate at bottom of field oxide caused by the existence of P-ring.

关 键 词：shield gate trench MOSFET repetitive unclamped inductive switching stress DEGRADATION static and dynamic parameters 

分 类 号：TN386[电子电信—物理电子学]