Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures  

作　　者：Wenyu Huang Cangmin Wang Yichao Liu Shaoting Wang Weifeng Ge Huaili Qiu Yuanjun Yang Ting Zhang Hui Zhang Chen Gao 黄文宇;王藏敏;刘艺超;王绍庭;葛威锋;仇怀利;杨远俊;张霆;张汇;高琛(School of Physics,Hefei University of Technology,Hefei 230009,China;School of Microelectronics,Hefei University of Technology,Hefei 230009,China;Hefei National Laboratory for Physical Sciences at Microscale(HFNL),University of Science and Technology of China,Hefei 230026,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]School of Physics,Hefei University of Technology,Hefei 230009,China [2]School of Microelectronics,Hefei University of Technology,Hefei 230009,China [3]Hefei National Laboratory for Physical Sciences at Microscale(HFNL),University of Science and Technology of China,Hefei 230026,China [4]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Chinese Physics B》2022年第9期532-539,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.52072102 and 11775224);It was also partially funded through the Open Foundation of the Hefei National Laboratory for Physical Sciences at the Microscale(Grant No.KF2020002).

摘　　要：Because of the wide selectivity of ferromagnetic and ferroelectric(FE)components,electric-field(E-field)control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures.Here,an MgO-based magnetic tunnel junction(MTJ)is chosen rationally as the ferromagnetic constitution and a high-activity(001)-Pb(Mg_(1/3)Nb_(2/3))_(0.7)Ti_(0.3)O_(3)(PMN-0.3PT)single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure.The shape of tunneling magnetoresistance(TMR)versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias.The E-field-controlled change in the TMR ratio is up to-0.27%without magnetic-field bias.Moreover,when a typical magnetic field(~±10 Oe)is applied along the minor axis of the MTJ,the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias.This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ.In addition,based on such a multiferroic heterostructure,a strain-gauge factor up to approximately 40 is achieved,which decreases further with a sign change from positive to negative with increasing magnetic fields.This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.

关 键 词：tunneling magnetoresistance magneti tunnel junction(MTJ) multiferroic heterostructure magnetoelectric coupling 

分 类 号：O469[理学—凝聚态物理]