Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB  

作　　者：Hong Wang Zunren Lv Shuai Wang Haomiao Wang Hongyu Chai Xiaoguang Yang Lei Meng Chen Ji Tao Yang 王虹;吕尊仁;汪帅;王浩淼;柴宏宇;杨晓光;孟磊;吉晨;杨涛(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;College of In formation Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China;Zhejiang Laboratory,Hangzhou 310027,China)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]College of In formation Science and Electronic Engineering,Zhejiang University,Hangzhou 310027,China [4]Zhejiang Laboratory,Hangzhou 310027,China

出　　处：《Chinese Physics B》2022年第9期570-574,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.62035012,62074143,and 62004191);Zhejiang Lab (Grant No.2020LC0AD02)

摘　　要：We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.

关 键 词：chirped quantum-dot superluminescent diodes direct Si doping 

分 类 号：O413[理学—理论物理] TN312.8[理学—物理]