Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing  

作　　者：Chen Wang Wei-Hang Fan Yi-Hong Xu Yu-Chao Zhang Hui-Chen Fan Cheng Li Song-Yan Cheng 王尘;范伟航;许怡红;张宇超;范慧晨;李成;陈松岩(Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices,School of Opto-electronic and Communiction Engineering,Xiamen University of Technology,Xiamen 361024,China;Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China)

机构地区：[1]Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices,School of Opto-electronic and Communiction Engineering,Xiamen University of Technology,Xiamen 361024,China [2]Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

出　　处：《Chinese Physics B》2022年第9期619-623,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61904155);the Science and technology Project of Fujian Provincial Department of Education,China(Grant No.JAT200484);the Natural Science Foundation of Fujian Province,China(Grant No.2018J05115);the Scientific Research Projects of Xiamen University of Technology,China(Grant No.YKJCX2020078).

摘　　要：The diffusion and the activation of phosphorus in phosphorus and fluorine co-implanted Ge after being annealed by excimer laser are investigated.The results prove that the fluorine element plays an important role in suppressing phosphorus diffusion and enhancing phosphorus activation.Moreover,the rapid thermal annealing process is utilized to evaluate and verify the role of fluorine element.During the initial annealing of co-implanted Ge,it is easier to form high bonding energy FnVm clusters which can stabilize the excess vacancies,resulting in the reduced vacancy-assisted diffusion of phosphorus.The maximum activation concentration of about 4.4 ×10^(20) cm^(-3) with a reduced diffusion length and dopant loss is achieved in co-implanted Ge that is annealed at a tailored laser fluence of 175 mJ/cm^(2).The combination of excimer laser annealing and co-implantation technique provides a reference and guideline for high level n-type doping in Ge and is beneficial to its applications in the scaled Ge MOSFET technology and other devices.

关 键 词：phosphorus diffusion activation concentration co-implanted fluorine GERMANIUM excimer laser annealing 

分 类 号：TG146.43[一般工业技术—材料科学与工程] TN249[金属学及工艺—金属材料]