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作 者:王伟[1] 梁聪 祁志强 闫瑞舰 陈连明 李旭[2] 宋鹏先[2] 王浩鸣[2] WANG Wei;LIANG Cong;QI Zhiqiang;YAN Ruijian;CHEN Lianming;LI XU;SONG Pengxian;WANG Haoming(Beijing Key Laboratory of High Voltage&Electromagnetic Compatibility,North China Electric Power University,Beijing 102206,China;Tianjin Electric Power Research Institute of State Grid Tianjin Electric Power Company,Tianjin 300220,China)
机构地区:[1]华北电力大学高电压与电磁兼容北京市重点实验室,北京102206 [2]国网天津市电力公司电力科学研究院,天津300220
出 处:《绝缘材料》2022年第10期93-98,共6页Insulating Materials
摘 要:通过建立热缩和冷缩电缆附件典型缺陷模型,在0.1 Hz超低频和振荡波电压下进行局部放电试验,测量并对比两种电压下电缆典型缺陷的局部放电起始电压(PDIV)、局部放电量以及局部放电次数等参量的差异,并对这些差异的形成机制进行分析。结果表明:对于所测量的大多数缺陷,振荡波电压下的PDIV更小,局部放电量更大,局部放电脉冲数更多。缺陷位置电压分布机制和电压恢复速率的不同是导致上述差异的主要原因。The typical defects model of heat-shrinkable and cold-shrinkable cable accessories were established,and partial discharge tests were carried out at 0.1 Hz ultra-low frequency and oscillatory wave voltage.The differences in the partial discharge inception voltage(PDIV),the PD quantity,the number of PD and other parameters of the typical defects under the two voltages were measured and compared,and the formation mechanism of these differences was analyzed.The results show that for most of the measured defects,compared with under 0.1 Hz ultra-low frequency voltage,the PDIV under the oscillating wave voltage is lower,the PD quantity is larger,and the number of partial discharge pulses is more.The difference in the voltage distribution mechanism and the voltage recovery rate at the defect location is the main reason for the above-mentioned difference.
分 类 号:TM247[一般工业技术—材料科学与工程]
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