Eu^(3+),Tm^(3+)共掺GaN薄膜的发光特性和能量传递机制  

Luminescence Characteristics and Energy Transfer Mechanism of Eu^(3+),Tm^(3+)Co-doped GaN Films

作　　者：王丹 夏永禄 王晓丹[1] 陈华军 陈家凡 毛红敏[1] 曾雄辉[2] 徐科[2] WANG Dan;XIA Yonglu;WANG Xiaodan;CHEN Huajun;CHEN Jiafan;MAO Hongmin;ZENG Xionghui;XU Ke(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou,Jiangsu 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China)

机构地区：[1]苏州科技大学物理科学与技术学院江苏省微纳热流技术与能源应用重点实验室,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《光子学报》2022年第9期138-146,共9页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.61974158,61306004);江苏省自然科学基金(No.BK20191456);江苏省“十三五”重点学科(No.20168765);江苏省“十四五”重点学科(No.2021135)。

摘　　要：采用离子注入的方法制备了Eu^(3+),Tm^(3+)离子共掺杂GaN薄膜。通过温度依赖光致发光光谱研究了GaN:Eu^(3+)薄膜中Eu^(3+)的发光特性,发现了三类具有不同温度依赖特性的Eu^(3+)发射峰。利用阴极荧光光谱探究了GaN:Eu^(3+),Tm^(3+)薄膜的光谱性质,发现随着Tm^(3+)剂量的增加,Eu^(3+)发射强度以及Tm^(3+)的I_(480)/I_(806)强度比值均发生降低,分析表明存在Eu^(3+)→Tm^(3+)离子的能量传递,并通过计算分析证明其能量传递机制主要为电偶极子-电偶极子相互作用。通过改变Eu^(3+)、Tm^(3+)离子在GaN薄膜中的剂量比例,实现了材料发光颜色的有效调控。As an important semiconductor material,GaN is widely studied for its photoelectric properties.In order to save energy and adapt to the development of miniaturization,it is a current development trend to integrate three-primary colors(RGB)light-emitting devices on chips.GaN as a relatively mature lightemitting host,can achieve full band light emitting from ultra-violet to infra-red by doping different rare earth ions.Therefore,rare earth doped GaN materials have an important application prospect in white light emitting diodes.Hence,in this paper Eu^(3+)or Tm^(3+)doped GaN films were prepared by ion implantation method.The effects of different temperatures and ion implantation doses on the luminescence properties of GaN:Eu^(3+),Tm^(3+)films were investigated.Finally,the mechanism of energy transfer interaction between Eu^(3+)and Tm^(3+)was also analyzed.In terms of material preparation,firstly GaN thin films with thickness of 5μm were grown on c-plane sapphire substrate by Metal-organic Chemical Vapor Deposition(MOCVD).Then,different doses of Eu^(3+)or Tm^(3+)ions were implanted into GaN films by ion implantation,respectively.To remove the crystal lattice damage,the samples were annealed at 1040℃under flowing NH_(3) atmosphere for 2 h.The luminescence properties of GaN:Eu^(3+),Tm^(3+)films were studied by Temperature-Dependent Photoluminescence(TDPL)spectra.On one hand,at room temperature,five transition peaks at 544,601,622,633 and 665 nm were observed,corresponding to the Eu^(3+)^(5)D_(1)→^(7)F_(1),^(5)D_(0)→^(7)F_(1),^(5)D_(0)→^(7)F_(2),5D1→^(7)F_(4) and ^(5)D_(0)→^(7)F_(3) transitions,respectively.On the other hand,three kinds of Eu^(3+)^(5)D_(0)→^(7)F_(2) and ^(5)D_(1)→^(7)F_(4) emission peaks labeled as P1-P_(7) with different temperature-dependent properties were found in which P_(2) and P_(6) emission peaks show similar temperature dependence;the temperature dependence of P1 emission peak is different from that of P_(2);but the P_(3),P_(4),P_(5) and P_(7) emission peaks have similar tempera

关 键 词：光电子 光致发光 阴极荧光 氮化镓 铕 铥 能量传递 

分 类 号：TN29[电子电信—物理电子学]