一种宽输入高PSRR高精度的带隙基准电路  

A High-precision Temperature Compensation Bandgap Voltage Reference with Wide Input Range and High PSRR

作　　者：温立国 沈红伟 田露 原义栋 WEN Li-guo;SHEN Hong-wei;TIAN Lu;YUAN Yi-dong(Beijing Smart-Chip Microelectronics Technology Co.,Ltd.)

机构地区：[1]北京智芯微电子科技有限公司

出　　处：《中国集成电路》2022年第9期29-35,56,共8页China lntegrated Circuit

摘　　要：针对电源管理类芯片对宽输入范围、高电源抑制比的需求,设计一款新型带隙基准电路。外部电源经两级限压限流得到核心基准模块的电源,该电源相对输入具有很高的电源抑制比,充分保障了内部模块供电的稳定。温度补偿部分通过压控电流反馈和高低温分段补偿技术实现了基准源的高精度输出。基于HHGRACE 180nm BCD工艺设计,输入电源工作范围3-50V、电源抑制比-100dB@1MHZ、输出参考电源1.237V、工作温度在-40~130℃范围内、温度系数9.6 ppm/℃。PVT条件下电压变化小于5mV、波动范围±0.2%,能够满足电源系统对参考电压的要求。A bandgap reference circuit is designed for the requirements of wide input range and high power supply rejection ratio in the field of power management.The power supply of Bandgap(BG)core is high PSRR through two-stage compression of voltage and current,which is basic for the high-precision reference of the core.The voltage controlled current feedback and Multi-interval temperature compensation technology is the key to achieve highprecision reference.The circuit is designed in HHgrace 180nm BCD process,Input Power Supply:3-50V,PSRR:-100dB@1MHZ,The Reference Ouput:1.237V and the Temperature Coefficient is 6.9 ppm/℃@-40~130℃.Under the condition of PVT,the voltage variation is less than 5mV,± 0.2%,which is better in the power management IC design.

关 键 词：带隙基准 电源抑制比 宽输入范围 分段温度补偿 

分 类 号：TN432[电子电信—微电子学与固体电子学]