材料形貌对碲镉汞红外焦平面器件性能的影响  

Effect of Material Morphology on the Performance of HgCdTe Infrared Focal Plane Devices

作　　者：陈书真 祁娇娇 王丹 程杰 高华 何斌 CHEN Shuzhen;QI Jiaojiao;WANG Dan;CHENG Jie;GAO Hua;HE Bin(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外技术》2022年第10期1033-1040,共8页Infrared Technology

摘　　要：碲镉汞材料表面的粗糙度对钝化膜层的质量、接触孔的光刻与刻蚀都有着显著的影响,研究其表面的粗糙度对器件性能的影响具有重要意义。在本文中,我们分别研究了碲镉汞的小平面形貌和台阶形貌对器件性能的影响,以及不同表面粗糙度的碲镉汞材料对器件制备工艺和最终性能的影响。研究表明,随着材料表面粗糙度的增加,钝化层的质量下降,接触孔的均匀性下降,且接触孔的形貌变差,I-V性能下降,最终导致器件的响应非均匀性增加,盲元数增加。The roughness of material surfaces has a significant impact on the quality of passivation films and the lithography and etching of contact holes.Therefore,studying the influence of the surface roughness of materials on the performance of HgCdTe infrared focal plane devices’is important.In this study,we separately evaluated the influence of the facet morphology and step morphology of mercury cadmium telluride on the performance of the device and the influence of mercury cadmium telluride materials with different surface roughness on the preparation process and final performance of the device.Studies have shown that as the surface roughness of the materials increases,the quality of the passivation layers decreases,uniformity of the contact holes decreases,morphology of the contact holes deteriorates,and I-V performance is degraded,eventually leading to an increase in the non-uniformity of the device responses and an increase in the blind pixel rate.

关 键 词：碲镉汞 生长台阶 粗糙度 盲元率 零偏阻抗 响应非均匀性 

分 类 号：TN213[电子电信—物理电子学]