Artificial synaptic and self-rectifying properties of crystalline(Na_(1-x)K_(x))NbO_(3)thin films grown on Sr_(2)Nb_(3)O_(10)nanosheet seed layers  

作　　者：In-Su Kim Jong-Un Woo Hyun-Gyu Hwang Bumjoo Kim Sahn Nahm 

机构地区：[1]Department of Materials Science and Engineering,Korea University,Seoul 02841,Republic of Korea [2]KU-KIST Graduate School of Converging Science and Technology,Korea University,Seoul 02841,Republic of Korea

出　　处：《Journal of Materials Science & Technology》2022年第28期136-143,共8页材料科学技术（英文版）

基　　金：supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.2020R1A2B5B01002063);the KU-KIST Graduate School Program of the Korea University。

摘　　要：Crystalline(Na_(1-x)K_(x))NbO_(3)(NKN)thin films were deposited on Sr_(2)Nb_(3)O_(10)/TiN/Si(S-TS)substrates at 370°C.Sr_(2)Nb_(3)O_(10)(SNO)nanosheets served as a template for the formation of crystalline NKN films at low temperatures.When the NKN film was deposited on one SNO monolayer,the NKN memristor exhibited normal bipolar switching characteristics,which could be attributed to the formation and destruction of oxygen vacancy filaments.Moreover,the NKN memristor with one SNO monolayer exhibited artificial synaptic properties.However,the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties,with the two SNO monolayers acting as tunneling barriers in the memristor.The conduction mechanism of the NKN memristor with two SNO monolayers in the highresistance state is attributed to Schottky emission,direct tunneling,and Fowler–Nordheim(FN)tunneling.The current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN tunneling.Additionally,the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic properties.Therefore,an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.

关 键 词：Bipolar switching properties Self-rectifying bipolar switching properties Artificial synaptic properties Crystalline NKN thin film Sr_(2)Nb_(3)O_(10)nanosheet seed layer 

分 类 号：TB383.1[一般工业技术—材料科学与工程]