不同凝固条件下共晶Si生长界面稳定性及分枝生长  

Interfacial Stability and Branch Growth of Eutectic Si Under Different Solidification Conditions

作　　者：周鹏飞[1,2] 顾伟璐 陆从相 杨书根[1] 孙瑜 ZHOU Peng-fei;GU Wei-lu;LU Cong-xiang;YANG Shu-gen;SUN Yu(Yancheng Polytechnic College,Yancheng 224005,Jiangsu,China;School of Material Science and Engineering,Yancheng Institute of Technology,Yancheng 224005,Jiangsu,China)

机构地区：[1]盐城工业职业技术学院,江苏盐城224005 [2]盐城工学院材料科学与工程学院,江苏盐城224005

出　　处：《铸造》2022年第9期1095-1100,共6页Foundry

基　　金：2022年度国家外国专家项目(G2022014146L);2022年度江苏省高校基础科学自然科学面上项目(22KJD430011);江苏省产学研合作项目(BY2022482,2021HX-67);2019校级自然科学基金项目(ygy2019-04)。

摘　　要：通过OM、SEM、EBSD等技术分析了不同凝固条件下共晶Si的生长行为。结果表明:共晶Si存在从平界面→胞状晶→树枝晶的转变过程。同一个共晶(团)晶粒的Si相和α相都不是单晶体。Al、Si两相共生生长过程中,共晶α可通过重复形核、亚晶界以及小角度晶界来调整生长位向以满足两相耦合生长的要求。The growth behavior of eutectic Si under different solidification conditions was analyzed by using of OM, SEM, and EBSD. The results show that the eutectic Si has a transformation process from flat interface→cellular crystal→dendritic crystal. The Si phase and α phase in the same grain are not single crystals. During the co-growth process of Al and Si, eutectic α can adjust its growth position to meet the requirements of two-phase coupling growth by repeating nucleation, sub-grain boundary and small-angle grain boundary.

关 键 词：共晶Si 胞状晶 树枝晶 耦合生长 

分 类 号：TG146.21[一般工业技术—材料科学与工程]