Co掺杂Bi_(5)Ti_(3)FeO_(15)陶瓷的介电性能分析  

Dielectric properties of Co doped Bi_(5)Ti_(3)FeO_(15) ceramics

作　　者：夏珍雨 孙奥 何永杰 周杨馨 陈晓琴[1] XIA Zhenyu;SUN Ao;HE Yongjie;ZHOU Yangxin;CHEN Xiaoqin(Faculty of Physics&Electronic Sciences,Hubei University,Wuhan 430062,China)

机构地区：[1]湖北大学物理与电子科学学院,湖北武汉430062

出　　处：《湖北大学学报（自然科学版）》2022年第6期709-714,共6页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(51002047、11274101)资助。

摘　　要：采用传统固相法制备Bi_(5)Fe_(1-x)Co_(x)Ti_(3)O_(15)(BTFO-x,其中x=0,0.2,0.4,0.6,0.8)陶瓷样品,研究Co掺杂对Bi_(5)Ti_(3)FeO_(15)(BTFO)微观结构和介电性能的影响.X线衍射谱显示样品均已形成四层钙钛矿相,呈正交结构.从显微镜中可以观察到,随着Co掺杂含量的增加,陶瓷样品晶粒大小也随之增大.另外,Co对Fe的部分取代,影响陶瓷样品的介电性能.实验得到综合性能最佳的Co掺杂样品为BTFO-0.2,在室温下和高温下均具备较好的介电性能.另外,在所有陶瓷样品中发现的介电弛豫过程,可由拟合出的活化能来解释,这种弛豫现象由氧空位的跃迁导致.Bi_(5)Fe_(1-x)Co_(x)Ti_(3)O_(15)(BTFO-x,x=0,0.2,0.4,0.6,0.8)ceramics were prepared by traditional solid state reaction method.The microstructure and dielectric properties were investigated.XRD results show that all the ceramics exhibit four layers of bismuth layered perovskite phase with orthogonal structure,and the structure changes with the increase of doping content.The change of dielectric properties of these ceramics is caused by Co substitution.The Co-doped sample with the best comprehensive performance is BTFO-0.2,which has good dielectric properties at room temperature and high temperature.Dielectric relaxation processes found in all ceramic samples,which is caused by the transition of oxygen vacancy.

关 键 词：固相烧结 层状钙钛矿 介电性能 

分 类 号：O469[理学—凝聚态物理]