深振荡磁控溅射的脉冲放电特性  

Pulse discharge in deep oscillatory pulsed magnetron sputtering

作　　者：王浩琦 欧伊翔 华青松 邱马顺 帅麒麟 付薇 WANG Haoqi;OU Yixiang;HUA Qingsong;QIU Mashun;SHUAI Qilin;FU Wei(Key Laboratory of Beam Technology of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,100875,Beijing,China;Radiation Technology Institute,Beijing Academy of Science and Technology,100875,Beijing,China;Changzhi Medical Collge,046000,Changzhi,Shanxi,China)

机构地区：[1]射线束技术教育部重点实验室,北京师范大学核科学与技术学院,北京100875 [2]北京市科学技术研究院辐射技术研究所,北京100875 [3]长治医学院,山西长治046000

出　　处：《北京师范大学学报（自然科学版）》2022年第5期775-780,共6页Journal of Beijing Normal University(Natural Science)

基　　金：国家重点研发计划资助项目(2020YFB2104500);广东省科技厅重点研发计划资助项目(2019B090909002)。

摘　　要：深振荡磁控溅射(Deep Oscillation Magnetron Sputtering,DOMS)通过一系列调制的电压微脉冲振荡波形,能够实现完全消除电弧放电和靶材近全离化,实现高密度、低离子能量和高束流密度的等离子体沉积.本文综述了DOMS的技术原理和深振荡脉冲放电特性对等离子体离子种类、离子能量的时空演化过程的影响,结果表明,DOMS脉冲参数对靶离化过程的影响遵循电压-时间演变规律,靶离化过程为随短脉冲电压振荡的阶段性离化.Deep oscillation magnetron sputtering(DOMS) can achieve complete elimination of arc discharge and near total ionization of target through a series of modulated voltage micro-pulse oscillation waveforms,to achieve high density,low ion energy and high beam density plasma deposition. This paper reviews technical principles of DOMS and effects of deep oscillatory pulse discharge on spatiotemporal evolution of plasma ion species and ion energy. Influence of DOMS pulse parameters on target ionization process was found to follow the law of voltage time evolution. Target ionization process is found to be phased ionization oscillating with short pulse voltage.

关 键 词：深振荡磁控溅射 载能离子束沉积 脉冲放电特性 离子分布 

分 类 号：TG174.44[金属学及工艺—金属表面处理]