水溶液中低温电沉积法制备锗薄膜工艺  

Preparation Process of Low-temperature Electrodeposition of Germanium Thin Film in Aqueous Solution

作　　者：杨程 赵占霞[1] 张承龙[2,3] 王瑞雪 马恩 YANG Cheng;ZHAO Zhanxia;ZHANG Chenglong;WANG Ruixue;MA En(Department of Physics,Shanghai University,Shanghai 200444,China;School of Resources and Environmental Engineering,Shanghai Polytechnic University,Shanghai 201209,China;Shanghai Collaborative Innovation Centre for WEEE Recycling,Shanghai 201209,China)

机构地区：[1]上海大学理学院物理系,上海200444 [2]上海第二工业大学资源与环境工程学院,上海201209 [3]上海电子废弃物资源化协同创新中心,上海201209

出　　处：《有色金属工程》2022年第10期38-46,85,共10页Nonferrous Metals Engineering

基　　金：国家自然科学基金资助项目(51474146);国家重点研发计划项目(2018YFC1902300)。

摘　　要：以二氧化锗作为锗源,在水溶液体系中分别以固态和液态电极进行半导体锗薄膜的制备并对其进行分析。XRD和拉曼光谱显示在Cu板上制备的样品均为无定形态的锗,沉积温度和时间对锗薄膜最终形成厚度具有显著影响,同时,过高的沉积温度会使锗薄膜在生长过程中产生裂缝。而在较低温度下(<90℃)可在液态电极上制备出晶体锗薄膜,且当沉积温度为80℃时晶体锗薄膜质量相对最好。此外,XRD结果表明,较低的锗源浓度(<70 mmol/L)会阻碍锗在(220)和(311)晶面的生长。Germanium dioxide was used as the germanium source for the preparation and analysis of semiconductor germanium films on solid and liquid electrodes in an aqueous solution system.XRD and Raman spectra showed that the samples prepared on Cu plates were all amorphous germanium and the deposition temperature and time had a significant effect on the final formation thickness of the germanium films,while a too high deposition temperature may cause cracks in the germanium films during growth.In contrast,crystalline germanium films can be prepared on liquid electrodes at lower temperatures(<90℃),and the optimal quality of crystalline germanium films was achieved when the deposition temperature was 80℃.In addition,XRD results showed that the growth of germanium on the(220)and(311)crystal planes was hindered when the concentration of the germanium source was low(<70 mmol/L).

关 键 词：电沉积 液态电极 锗薄膜 水溶液 

分 类 号：TN304[电子电信—物理电子学]