微纳米结构P(VDF-TrFE)超薄膜器件的制作与封装  

Fabrication and Packaging of P(VDF-TrFE) Ultra-thin Films Devices with Micro/Nano Structure

作　　者：何宝胜 胡志军 HE Baosheng;HU Zhijun(School of Optoelectronic Science and Engineering,Soochow University,Jiangsu 215127,China)

机构地区：[1]苏州大学光电科学与工程学院,江苏215127

出　　处：《电子技术（上海）》2022年第8期4-6,共3页Electronic Technology

摘　　要：阐述提升P(VDF-TrFE)超薄膜(μm)的灵敏度,在P(VDF-TrFE)薄膜表面制作上了具有微纳米尺寸闪耀光栅结构的基础上,进行了多种器件设计并测试。探讨利用一系列手段对P(VDF-TrFE)超薄膜的形貌、厚度以及残留层等特征进行了表征。在器件制作过程中,通过利用铜箔作为电极引入空气层进而降低有源层的介电常数,使得器件的灵敏度相比较于传统真空蒸镀制作电极器件提升了2~3倍。To improve the sensitivity of P(VDF-TrFE) ultrathin films(μm), a variety of devices have been designed and tested in this paper on the basis of fabricating the P(VDF-TrFE) ultrathin film with micro/nano scale sparkle grating structure. In this paper, the morphology, thickness, and residual layer of P(VDF-TrFE) ultra-thin films were characterized by a series of methods. During the fabrication of the device, copper foil is used as the electrode to introduce the air layer to reduce the dielectric constant of the active layer, so that the sensitivity of the device is increased by 2~3 times compared with the traditional vacuum evaporation electrode device.

关 键 词：微纳米结构 图案复印技术 薄膜器件 灵敏度 P(VDF-TrFE) 

分 类 号：TN37[电子电信—物理电子学] TN305