Stable GeSe thin-film solar cells employing non-toxic SnO_(2)as buffer layer  

作　　者：Jian-Min Wu Yan-Ping Lv Hao Wu Hui-Sheng Zhang Fang Wang Jun Zhang Jin-Zeng Wang Xiao-Hong Xu 

机构地区：[1]Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education,School of Chemistry and Materials Science,Shanxi Normal University,Taiyuan,030000,China

出　　处：《Rare Metals》2022年第9期2992-2997,共6页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.51871137,51971122 and 11804210);the National Key R&D Program of China(No.2017YFB0405703);the 1331 Engineering of Shanxi Province;the Key Research and Development Projects of Linfen City(No.2027);the Applied Basic Research Project of Shanxi Province(No.20210302124103)。

摘　　要：Germanium monoselenide(GeSe)has attracted significant attention recently for its excellent optoelectronic properties,nontoxicity,and high stability.However,the current best-performance GeSe solar cells usually take toxic CdS as the buffer layer that restricts their practical applications.Here we select non-toxic SnO_(2)as the buffer layer and construct environment-friendly SnO_(2)/GeSe heterojunction solar cells.

关 键 词：stability. HETEROJUNCTION OPTOELECTRONIC 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TB383[一般工业技术—材料科学与工程]