Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures  

作　　者：Li-Ping Peng A-Ling He Liang Fang Xiao-Fei Yang 

机构地区：[1]Research Center of Laser Fusion,Chinese Academy of Engineering Physics,Mianyang,621900,China [2]Department of Applied Physics,Chongqing University,Chongqing,400030,China [3]Science and Technology Information Center,Chinese Academy of Engineering Physics,Mianyang,621900,China

出　　处：《Rare Metals》2022年第9期3239-3243,共5页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.50942021,50975301)。

摘　　要：High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scanning electron microscope(SEM)and Hall and transmittance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear programming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85%in the visible range and a low resistivity of 2.4×10^(−3)Ω·cm and can thus be used as a transparent electrode.

关 键 词：ZnO thin films Transparent conductive oxide Optical constant Magnetron sputtering 

分 类 号：TB383[一般工业技术—材料科学与工程]