基于PCB罗氏线圈的SiC MOSFET简化短路保护电路研究  

Simplified Short-circuit Protect Circuits Based on PCB Rogowski Coils for SiC MOSFETs

作　　者：项鹏飞 郝瑞祥[1] 郝一 游小杰[1] 卜宪德 XIANG Pengfei;HAO Ruixiang;HAO Yi;YOU Xiaojie;BU Xiande(School of Electrical Engineering,Beijing Jiaotong University,Haidian District,Beijing 100044,China;State Key Laboratory of Advanced Power Transmission Technology(Global Energy Interconnection Research Institute),Changping District,Beijing 102209,China)

机构地区：[1]北京交通大学电气工程学院,北京市海淀区100044 [2]先进输电技术国家重点实验室(全球能源互联网研究院有限公司),北京市昌平区102209

出　　处：《中国电机工程学报》2022年第19期7194-7204,共11页Proceedings of the CSEE

基　　金：中央高校基本科研业务费专项资金项目(2020YJS165)。

摘　　要：随着宽禁带器件的发展,碳化硅金属–氧化物半导体场效应晶体管(silicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFET)被广泛应用,对其短路保护的研究成为了保障电力电子设备可靠性的重要课题。文中提出一种基于PCB罗氏线圈的Si C MOSFET简化短路保护电路。相比于已有的积分式罗氏线圈短路检测方案,所提出的方案改进了其复杂且高成本的信号处理电路,可以根据设定的电流变化率阈值和故障时间阈值直接诊断器件的电流工作状态,并实现快速、准确、可靠的短路保护。文中分析Si CMOSFET的短路行为以及寄生参数对短路检测的影响;着重研究PCB罗氏线圈结构和电路参数的设计过程;为避免保护电路误动作,对干扰过程进行分析和验证,并提出相应的干扰抑制方案。最后通过多组实验验证所设计电路参数、干扰抑制方案的有效性及短路保护功能的可靠性。With the development of wide bandgap devices,SiC MOSFETs are widely used. The research on its short-circuit protection becomes an important issue to ensure the reliability of the power electronic equipment. A simplified short-circuit protection method based on PCB Rogowski Coil was proposed. Compared to the existing integral Rogowski Coil short-circuit detection method, the proposed method improved the complex and expensive signal processing circuit.It could diagnose the device’s working state directly according to the designed current change rate threshold and failure time threshold, and realize fast, accurate, and reliable short-circuit protection. The short-circuit behaviors of SiC MOSFET and the influences of parasitic parameters on the short circuit detection were analyzed. Then, the structure of the PCB Rogowski coil and the parameters design were studied. In order to avoid the protection circuit misoperation, the interference process was analyzed and verified, and the corresponding suppression scheme was proposed. At last, the availability of the circuit parameters and interference suppression scheme was verified, and the reliability of short-circuit protection function was tested under different short-circuit conditions.

关 键 词：SiC MOSFET 短路 短路保护 PCB罗氏线圈 电流变化率 

分 类 号：TM464[电气工程—电器]