半导体发明史回眸及其创新驱动力探讨  

Review of Invention History of Semiconductor and Discussion for the Invention Drive Force

作　　者：王学良 WANG Xueliang(Department of Optics and Engineering Electronic Information,City University of Suzhou,Suzhou 215104,China;Advanced Semiconductor Manufacturing Co.,Ltd.,Shanghai 200233,China)

机构地区：[1]苏州城市学院光学与电子信息工程学院,江苏苏州215104 [2]上海先进半导体制造有限公司,上海200233

出　　处：《河南科技》2022年第18期37-41,共5页Henan Science and Technology

基　　金：江苏省高校自然科学基金(19KJD510006)。

摘　　要：本研究回顾了近150年的半导体理论及技术发明史,根据半导体发明史的特征,可将其划分为3个发明历史阶段,即半导体早期发明史、半导体中期发明史和半导体现代发明史,并对半导体发明史中的创新驱动模式进行探讨,接着阐述三大发明创新模式及其对半导体科技发明创新的影响。This study reviews the history of semiconductor theory and technological inventions in the past150 years. According to the characteristics of the history of semiconductor inventions, it can be divided into three stages of invention history, namely, the early invention history of semiconductors, the middle invention history of semiconductors, and the modern invention history of semiconductors. The innovation-driven model in the history of semiconductor inventions is discussed, and then the three major invention innovation models and their impact on the innovation of semiconductor scientific and technological inventions are elaborated.

关 键 词：发明 半导体发明创新史 创新驱动模式 

分 类 号：TN303[电子电信—物理电子学]