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作 者:MENGXIA WANG HAILONG QIU TIANWEN YANG ZHENGPING WANG CHUANRUI ZHAO YUANAN ZHAO TING YU YUYAO JIANG MEILING CHEN YAFEI LIAN GE ZHANG HONGJUN LIU ZHANGGUI HU JIANDA SHAO
机构地区:[1]Laboratory of Thin Film Optics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Tianjin Key Laboratory of Functional Crystal Materials,Institute of Functional Crystal,Tianjin University of Technology,Tianjin 300384,China [4]State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China [5]Laboratory of High Power Fiber Laser Technology,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China [6]College of Science,Shanghai University,Shanghai 200444,China [7]Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
出 处:《Photonics Research》2022年第9期2122-2132,共11页光子学研究(英文版)
基 金:National Key Research and Development Program of China(2018YFE0115900);National Natural Science Foundation of China(11874369,51802218,51972229,52002271);China Postdoctoral Science Foundation(2021M703326);CAS Special Research Assistant Project;Key Foreign Cooperation Projects of the Bureau of International Cooperation of the Chinese Academy of Sciences(181231KYSB20210001);National Defense Science and Technology 173 Program(2021-JCJQ-JJ-0639)。
摘 要:1T-polytype tantalum disulfide(1T-TaS_(2)),an emerging strongly correlated material,features a narrow bandgap of 0.2 e V,bridging the gap between zero-bandgap graphene and large-bandgap 2D nonlinear optical(NLO)materials.Combined with its intense light absorption,high carrier concentration,and high mobility,1T-TaS_(2) shows considerable potential for applications in broadband optoelectronic devices.However,its NLO characteristics and related applications have rarely been explored.Here,1T-TaS_(2) nanosheets are prepared by chemical vapor deposition.The ultrafast carrier dynamics in the 400–1100 nm range and broadband NLO performance in the 515–2500 nm range are systematically studied using femtosecond lasers.An obvious saturable absorption phenomenon is observed in the visible to IR range.The nonlinear absorption coefficient is measured to be-22.60±0.52 cm MW-1under 1030 nm,which is larger than that of other typical 2D saturable absorber(SA)materials(graphene,black phosphorus,and MoS_(2))under similar experimental conditions.Based on these findings,using 1T-TaS_(2) as a new SA,passively Q-switched laser operations are successfully performed at 1.06,1.34,and 1.94μm.The results highlight the promise of 1T-TaS_(2) for broadband optical modulators and provide a potential candidate material system for mid-IR nonlinear optical applications.
关 键 词:saturable switched ABSORBER
分 类 号:TN248.1[电子电信—物理电子学]
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