Boosting electroluminescence performance of all solution processed In P based quantum dot light emitting diodes using bilayered inorganic hole injection layers  

作　　者：QIUYAN LI SHENG CAO PENG YU MEIJING NING KE XING ZHENTAO DU BINGSUO ZOU JIALONG ZHAO 

机构地区：[1]School of Physical Science and Technology,MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials,Guangxi University,Nanning 530004,China

出　　处：《Photonics Research》2022年第9期2133-2139,共7页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(12174075,62165001);Scientific and Technological Bases and Talents of Guangxi(Guike AD21220016);Natural Science Foundation of Guangxi Province(2022GXNSFFA0350325);Special Fund for Guangxi Bagui Scholars;Guangxi Hundred-Talent Program。

摘　　要：The development of high-performance In P-based quantum dot light-emitting diodes(QLEDs)has become the current trend in ecofriendly display and lighting technology.However,compared with Cd-based QLEDs that have already been devoted to industry,the efficiency and stability of In P-based QLEDs still face great challenges.In this work,colloidal Ni Oxand Mg-doped Ni Oxnanocrystals were used to prepare a bilayered hole injection layer(HIL)to replace the classical polystyrene sulfonate(PEDOT:PSS)HIL to construct high-performance In Pbased QLEDs.Compared with QLEDs with a single HIL of PEDOT:PSS,the bilayered HIL enables the external quantum efficiencies of the QLEDs to increase from 7.6%to 11.2%,and the T_(95)lifetime(time that the device brightness decreases to 95%of its initial value)under a high brightness of 1000 cd m^(-2)to prolong about 7 times.The improved performance of QLEDs is attributed to the bilayered HIL reducing the mismatched potential barrier of hole injection,narrows the potential barrier difference of indium tin oxide(ITO)/hole transport layer interface to promote carrier balance injection,and realizes high-efficiency radiative recombination.The experimental results indicate that the use of bilayered HILs with p-type Ni Oxmight be an efficient method for fabricating high-performance In P-based QLEDs.

关 键 词：DIODES injection PERFORMANCE 

分 类 号：TN383.1[电子电信—物理电子学]