宽禁带半导体光电材料及其应用研究  

Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications

作　　者：叶志镇[1,2] 王凤志 陈芳 陆杨丹 Ye Zhizhen;Wang Fengzhi;Chen Fang;Lu Yangdan(School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,Zhejiang,China;Institute of Wenzhou,Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials,Zhejiang University,Wenzhou 325006,Zhejiang,China)

机构地区：[1]浙江大学材料科学与工程学院,浙江杭州310027 [2]浙江大学温州研究院,温州市光电及纳米新材料重点实验室,浙江温州325006

出　　处：《光学学报》2022年第17期303-321,共19页Acta Optica Sinica

基　　金：浙江省“尖兵”“领雁”研发攻关计划(2022C01171);浙江省省级重点研发计划(2021C01030);浙江省博士后科研项目择优资助(ZJ2021143)。

摘　　要：宽禁带半导体具有独特的电子结构、丰富的微纳结构、低温可控制备、可柔性透明化、化学稳定性好、物丰价廉等特点,成为信息技术与环境技术新的重要基础材料。以氧化锌和钙钛矿这两种宽禁带半导体材料为例,分别介绍了两种材料的制备原理及方法、光电特性及其在紫外光源、透明导电薄膜、发光二极管等领域的应用。最后对其发展进行了展望。Wide band gap semiconductors have the characteristics of unique electronic structure,rich micro/nano structure,low temperature controllable preparation,flexible transparency,good chemical stability,abundant and inexpensive,etc.,which make it become a new important basic material of information technology and environmental technology.Taking zinc oxide and perovskite as two wide band gap semiconductor materials,the preparation principle and method,photoelectric properties,and applications in the fields of ultraviolet light sources,transparent conductive thin films,and light-emitting diodes of the two materials are summarized.Finally,the prospect of its development is given.

关 键 词：材料 氧化锌 紫外光源 透明导电薄膜 钙钛矿 发光二极管 

分 类 号：TN304[电子电信—物理电子学]