SiC MOSFET及Si IGBT串联短路动态特性研究  

Dynamic Characterization Study on Series Short-circuit of SiC MOSFET and Si IGBT

作　　者：张甜 宋明轩 冯源 何凤有 ZHANG Tian;SONG Mingxuan;FENG Yuan;HE Fengyou(School of Electrical and Power Engineering,China University of Mining and Technology,Xuzhou 221000,Jiangsu,China)

机构地区：[1]中国矿业大学电气与动力工程学院,江苏徐州221000

出　　处：《电气传动》2022年第21期3-7,共5页Electric Drive

基　　金：江苏省研究生科研与实践创新计划项目(KYCX212229)。

摘　　要：针对因器件击穿、控制失效等问题导致的串联短路现象,基于半桥结构分析了SiC MOSFET及Si IGBT不同的串联短路动态分压特性。同时,结合开关过程中电压、电流的变化分析串联短路分压原理,并在输出特性曲线上标注器件的分压路径。实验结果表明,驱动电压、负载电流、母线电压等外部驱动参数对两种器件串联短路分压特性的影响不同,其中反向负载电流改变了串联短路的分压趋势且对串联短路特性影响最大。充分认识器件的串联短路机理对改进短路保护具有现实意义。Aiming at the series short-circuit phenomenon caused by device breakdown and control failure,based on the half-bridge structure,the different series short-circuit dynamic sharing voltage characteristics of SiC MOSFET and Si IGBT were analyzed. At the same time,the principle of series short-circuit voltage sharing was analyzed combining with the changes of voltage and current during switching,and the voltage sharing path of the device was marked on the output characteristic curves. Experimental results show that the external driving parameters such as driving voltage,load current and bus voltage have different effects on the voltage sharing characteristics of the two devices on series short-circuit. The reverse load current changes the series short-circuit voltage sharing trend and most obviously effects the characteristics of series short-circuit. Fully understanding the series short-circuit mechanism is critical to improve the short-circuit protection strategies.

关 键 词：碳化硅MOSFET 硅IGBT 串联短路 

分 类 号：TN386[电子电信—物理电子学]