MoO_(3)掺杂有机半导体NPB光电性质研究  

Study of optical and electrical properties of MoO_(3) doped organic semiconductor NPB

作　　者：赵玉康 苏江森 吴有智[1] 张材荣[2] ZHAO Yu-kang;SU Jiang-sen;WU You-zhi;ZHANG Cai-rong(School of Materials Science&Engineering,Lanzhou Univ.of Tech.,Lanzhou 730050,China;School of Science,Lanzhou Univ.of Tech.,Lanzhou 730050,China)

机构地区：[1]兰州理工大学材料科学与工程学院,甘肃兰州730050 [2]兰州理工大学理学院,甘肃兰州730050

出　　处：《兰州理工大学学报》2022年第5期30-34,共5页Journal of Lanzhou University of Technology

基　　金：国家自然科学基金(11964016)。

摘　　要：在典型有机空穴传输材料胺类衍生物NPB(N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine)中引入过渡金属氧化物MoO_(3)制备了只有空穴传输的单载流子器件.结果表明:MoO_(3)的引入明显提升了NPB的导电性能,在约2.0 V的外加电压下,100 nm厚纯NPB薄膜电流密度仅为1.28 mA/cm^(2),而同样厚度的掺杂薄膜NPB∶MoO_(3)(50 wt.%)电流密度达到了2530 mA/cm^(2).同样掺杂比例的NPB∶MoO_(3)薄膜吸收谱显示位于500 nm附近存在既不同于NPB也不同于MoO_(3)的额外吸收峰,表明体系中产生了电荷转移复合物NPB+-MoO_(3)^(-),从而产生了额外的空穴载流子,进而提升了掺杂体系的导电性能.进一步的荧光分析表明,MoO_(3)的引入对NPB自身荧光具有明显的猝灭作用.NPB∶MoO_(3)(30 wt.%)薄膜的荧光强度比纯NPB薄膜荧光强度降低了2个数量级,NPB∶MoO_(3)(50 wt.%)掺杂薄膜的荧光强度降低为零.Hole only single carrier devices were prepared by introducing transition metal oxide MoO_(3)into the typical organic hole transport material amine derivative NPB(N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine).The results showed that the introduction of MoO_(3)significantly enhances the conductivity of NPB,at an applied voltage of about 2.0 V,the current density for a 100-nm-thick pure NPB device is only 1.28 mA/cm^(2),while that for NPB∶MoO_(3)(50 wt.%)device with the same film thickness is as high as 2530 mA/cm^(2).The absorption spectrum of the NPB∶MoO_(3)film with the same doping ratio showed that there is an additional absorption peak near 500 nm,which is different from that of NPB or MoO_(3),indicating that a charge transfer complex NPB^(+)-MoO_(3)^(-) has been formed in the doped system,resulting in additional hole carriers and thus enhancing the conductivity of the doped film.Further fluorescence analysis showed that the introduction of MoO_(3)has a significant quenching effect on the fluorescence of NPB.The fluorescence intensity of the NPB∶MoO_(3)(30 wt.%)films is reduced by two orders of magnitude compared to the pure NPB films,while that of the NPB∶MoO_(3)(50 wt.%)film was essentially reduced to zero.

关 键 词：有机半导体 NPB MoO_(3) 电荷转移复合物 猝灭 

分 类 号：TB34[一般工业技术—材料科学与工程]