甚长波碲镉汞红外探测器制备研究  

Research on preparation of very-long-wavelength infrared focal plane arrays

作　　者：田震 宋淑芳 邢艳蕾 孙浩 刘世光 TIAN Zhen;SONG Shu-fang;XING Yan-lei;SUN Hao;LIU Shi-guang(CETC Electro-Optics Technology Co.Ltd.,Beijing 100015,China)

机构地区：[1]中电科光电科技有限公司,北京100015

出　　处：《激光与红外》2022年第10期1527-1531,共5页Laser & Infrared

摘　　要：报道了碲镉汞甚长波红外焦平面探测器的最新研究进展。采用水平液相外延In掺杂和垂直液相外延As掺杂技术生长了高质量的p-on-n型双层异质结材料。并通过提高材料质量将双层异质结材料的双晶衍射半峰宽控制在30 arcsec以内。基于台面器件加工、表侧壁钝化以及In柱互连工艺,制备了640×512,25μm碲镉汞甚长波红外焦平面器件。通过进一步优化了材料生长和芯片制备工艺,在65 K的工作温度下,该器件的截止波长为14.35μm,有效像元率为98.06%,平均峰值探测率为8.09×10^(10)cm·Hz^(1/2)·W^(-1)。In this paper,the latest research progress of HgCdTe very-long-wavelength infrared(VLWIR)focal plane detectors is reported.High-quality p-on-n bilayer heterojunction materials are grown using horizontal liquid phase epitaxial In doping and vertical liquid phase epitaxial with As doping,and the XRD′s FWHM of the material is controlled below 30 aresec by increasing the amount of material.Based on mesa structure processing,surface sidewall passivation and In-column interconnection process,640×512 pixel VLWIR MCT pv-array with a(25μm×25μm)pixel pitch is prepared.By further optimizing the material growth and chip preparation process,the device has a cut-off wavelength of 14.35μm,an effective image rate of 98.06%,and an average peak detection rate of 8.09×10^(10)cm·Hz^(1/2)·W^(-1)at an operating temperature of 65 K.

关 键 词：双层异质结 甚长波红外 碲镉汞 红外焦平面探测器 

分 类 号：TN213[电子电信—物理电子学]