改善直流ZnO压敏电阻电气性能辅助性措施  

Auxiliary Measures to Improve Electrical Performance of DC ZnO Varistor

作　　者：程宽 赵洪峰[1] CHENG Kuan;ZHAO Hongfeng(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi,Xinjiang 830046,China)

机构地区：[1]电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,新疆大学电气工程学院,新疆乌鲁木齐830046

出　　处：《广东电力》2022年第10期91-99,共9页Guangdong Electric Power

基　　金：国家自然科学基金项目(51762038)。

摘　　要：为了避免在进行4/10μs大电流冲击或2 ms方波耐受试验时,ZnO压敏电阻样品侧面发生闪络,根据高梯度、低残压直流ZnO压敏电阻的配方、制备工艺等,研发出C系统配方(46%ZnO-16%Bi_(2)O_(3)-25%SiO_(2)-7%Sb_(2)O_(3)-3.5%Fe_(2)O_(3)-2.5%B_(2)O_(3))的无机高阻层。将C系统配方所制备的无机高阻层浆料涂抹在排胶后的ZnO压敏电阻坯体侧面,经高温烧结后,无机高阻层不仅能够与ZnO压敏电阻本体紧密结合,还具有较高的绝缘特性和机械强度。无机高阻层性能的提高不仅能显著降低ZnO压敏电阻在试验时发生闪络、裂纹等故障的概率,还有助于提高ZnO压敏电阻对能量的吸收能力,满足高梯度、低残压直流ZnO压敏电阻对能量吸收能力的需求。In order to avoid the side flashover of ZnO varistor sample during 4/10μs high current impulse or 2 ms square wave withstand test.According to the formula and preparation process of high gradient and low residual voltage DC ZnO varistor,the inorganic high resistance layer with C system formula(46%ZnO-16%Bi_(2)O_(3)-25 S iO_(2)-7%Sb_(2)O_(3)-3.5%Fe_(2)O_(3)-2.5%B_(2)O_(3))is developed in this paper.The inorganic high-resistance layer slurry prepared by the C system formula is coated on the side of the ZnO varistor blank after glue discharge.After high-temperature sintering,the inorganic high resistance layer can not only be closely combined with the ZnO varistor body,but also has high insulation characteristics and mechanical strength.The improvement of the performance of inorganic high resistance layer can not only significantly reduce the probability of flashover,cracks and other faults of ZnO varistor in the test,but also help to improve the ability of ZnO varistors to absorb energy,and meet the demand of high gradient and low residual voltage DC ZnO varistor for energy absorption capacity.

关 键 词：无机高阻层 绝缘特性 闪络 机械强度 ZNO压敏电阻 

分 类 号：TM24[一般工业技术—材料科学与工程] TM855[电气工程—电工理论与新技术]