外电场和双轴应变对MoSH/WSi2N4肖特基结势垒的调控  

Modulation of MoSH/WSi2N4 Schottky-junction barrier by external electric field and biaxial strain

作　　者：梁前 钱国林 罗祥燕 梁永超 谢泉 Liang Qian;Qian Guo-Lin;Luo Xiang-Yan;Liang Yong-Chao;Xie Quan(Institute of New Optoelectronic Materials and Technology,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,新型光电子材料与技术研究所,贵阳550025

出　　处：《物理学报》2022年第21期274-282,共9页Acta Physica Sinica

基　　金：贵州大学智能制造产教融合创新平台及研究生联合培养基地(批准号:2020-520000-83-01-324061);国家自然科学基金(批准号:61264004);贵州省高层次创新型人才培养项目(批准号:黔科合人才[2015]4015)资助的课题。

摘　　要：鉴于实验上最新合成的二维半导体材料WSiN(WSN)和二维金属材料MoSH(MSH),构建了金属-半导体MSH/WSN肖特基结.在实际的金属-半导体接触应用中,肖特基势垒的存在严重降低了器件的性能.因此,获得较小的肖特基势垒甚至是欧姆接触至关重要.本文使用第一性原理计算研究了在外电场和双轴应变作用下MSH/WSN肖特基结势垒的变化.计算结果表明,外电场和双轴应变均可以有效地调控MSH/WSN肖特基结势垒.正向外电场能实现MSH/WSN肖特基结p型与n型肖特基接触之间的动态转化,而负向外电场可实现MSH/WSN肖特基结向欧姆接触的转化.此外,较大的双轴应变可实现MSH/WSN肖特基结p型与n型肖特基接触的相互转化.此项工作为基于WSN半导体的肖特基功能器件及场效应晶体管提供理论指导.In view of the newly synthesized two-dimensional(2D)semiconductor material WSiN(WSN)and the 2D metal material MoSH(MSH),a metal-semiconductor MSH/WSN Schottky-junction is constructed in this work.In practical applications of metal-semiconductor contact,the presence of the Schottky barrier degrades the device performance severely.Therefore,it is crucial to obtain a smaller Schottky barrier height or even an Ohmic contact.Here,the first-principles calculations are used to investigate the variation of the Schottky barrier in MSH/WSN Schottky-junction under an external electric field and a biaxial strain.The results show that both external electric field and biaxial strain can effectively modulate the Schottky barrier of the MSH/WSN Schottky-junction.The dynamic switching between the p-type Schottky contact and the n-type Schottky contact can be achieved under the action of positive external electric field in the MSH/WSN Schottkyjunction.Under the action of negative external electric field,the MSH/WSN Schottky-junction can be modulated to realize the transition from the Schottky contact to the Ohmic contact.The large biaxial strain can also induce the MSH/WSN Schottky-junction to realize the transition between the p-type Schottky contact and the n-type Schottky contact.This work may provide theoretical guidance for the WSN semiconductor based Schottky functional devices and field-effect transistors.

关 键 词：WSi2N4 MoSH 金属-半导体接触 肖特基接触 

分 类 号：TB34[一般工业技术—材料科学与工程] TN386.3[电子电信—物理电子学]