垂直短沟道二硫化钼场效应晶体管  

Vertical short-channel MoS2 field-effect transistors

作　　者：田金朋 王硕培 时东霞[1,2] 张广宇 Tian Jin-Peng;Wang Shuo-Pei;Shi Dong-Xia;Zhang Guang-Yu(Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China)

机构地区：[1]中国科学院物理研究所,北京100190 [2]中国科学院大学物理科学学院,北京100190 [3]松山湖材料实验室,东莞523808

出　　处：《物理学报》2022年第21期359-364,共6页Acta Physica Sinica

基　　金：广东省重点领域研发计划(批准号:2020B0101340001);国家自然科学基金(批准号:61888102,11834017)资助的课题。

摘　　要：基于二维材料的场效应晶体管在超大规模集成技术方面具有非常大的应用潜力,因此开发高性能的短沟道二维半导体场效应晶体管是构建超大规模集成的必经之路.对于二维材料,获得10 nm以下沟道长度的二维半导体晶体管难度较大,目前很少有稳定制备亚10 nm二维半导体晶体管的方法.本文使用石墨烯作为接触材料,氮化硼作为间隔,可以稳定制备垂直短沟道二硫化钼场效应晶体管.基于此方法,制备了8 nm氮化硼间隔的垂直短沟道二硫化钼场效应晶体管.该器件展现出良好的开关特性,在不同的源漏电压下其开关比大于10^(7);同时关态电流小于100 fA/μm,对源漏直接隧穿效应有很好的抑制作用.此外,该方法同样适用于其他二维半导体短沟道晶体管的制备,为快速筛选出可适用于超大规模集成的二维材料提供了一种有效途径.Field effect transistors(FETs)based on two-dimensional(2D)materials have great potential applications in very large-scale integration technology,and high-performance short channel 2D semiconductor FETs are essential.Owing to the difficulty in obtaining channel lengths below 10 nm for 2D materials,there are few stable methods of fabricating short channel 2D semiconductor FETs.Here we report a method of stably fabricating vertical short-channel MoS_(2)FETs by using graphene as the contact material and h-BN as the spacer.The 8-nm spacer transistor exhibits good switching characteristics.The on/off ratio is greater than 10^(7) and the off-state current is less than 100 fA/μm under different source-drain voltages,which are immune well to the direct source-to-drain tunneling effect.This method can be used to rapidly screen two-dimensional materials that are immune to short-channel effects and also are suitable for the fabrication of high-performance FETs.

关 键 词：二维材料 二硫化钼 场效应晶体管 短沟道效应 

分 类 号：TQ136.12[化学工程—无机化工] TN386[电子电信—物理电子学]