1064nm连续激光辐照对硅基PIN探测器光生载流子影响的实验研究  

Experimental Study on the Effect of 1064nm Continuous Laser Irradiation on Photocarriers of Silicon-based PIN Detector

作　　者：麻健雄 魏智[1] 王頔[1] 金光勇[1] 梁超[1] MA Jianxiong;WEI Zhi;WANG Di;JIN Guangyong;LIANG Chao(School of Physics,Changchun University of Science and Technology,Changchun 130022)

机构地区：[1]长春理工大学物理学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2022年第4期19-24,共6页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省教育厅科学技术项目(XQNJJ-2018-07);吉林省自然科学基金(YDZJ202201ZYTS296)。

摘　　要：研究了连续激光对硅基PIN探测器中光生载流子的影响机理,建立1064 nm连续激光辐照硅基PIN探测器光生载流子的理论模型,搭建在线输出电流精确采集系统,研究了硅基PIN探测器在不同偏置电压、不同激光功率、不同作用时间条件下,其输出电流的变化规律。结果表明:硅基PIN探测器在外置偏压作用下,输出电流分为三个阶段:光生电流阶段、过渡阶段和恢复阶段。在光生电流阶段,输出电流随着外置偏压的增大而增大。在过渡阶段,输出电流随电压的增大而增大。随着激光注入量的停止,硅基PIN探测器进入恢复阶段及散热阶段,硅基PIN探测器特性开始缓慢恢复。Continuous laser for the influence mechanism of silicon-based PIN detector carrier is studied;a continuous laser irradiation of 1064 nm silicon PIN detector light living carrier of theoretical model is established;online output current ac-curate acquisition system is set up;t he output current variation regularity of silicon PIN detector at different bias voltage is studied under the condition of different laser power and action time.The results show that the output current of PIN detec-tor can be divided into three stages:photocurrent generation stage,t ransition stage and recovery stage.In the photocurrent generation phase,t he output current increases with the increase of external bias voltage.In the transition phase,t he output current increases as the voltage increases.With the cessation of laser injection,t he silicon-based PIN detector enters the re-covery stage and the heat dissipation stage,and the characteristics of silicon-based PIN detector begin to recover slowly.

关 键 词：1064nm连续激光 硅基PIN探测器 光生载流子 实验研究 

分 类 号：TN249[电子电信—物理电子学]