8英寸导电型4H-SiC单晶的生长  

Growth of 8 Inch Conductivity Type 4H-SiC Single Crystals

作　　者：杨祥龙 陈秀芳 谢雪健 彭燕 于国建 胡小波 王垚浩 徐现刚 YANG Xianglong;CHEN Xiufang;XIE Xuejian;PENG Yan;YU Guojian;HU Xiaobo;WANG Yaohao;XU Xiangang(Institute of Novel Semiconductors,State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China;Guangzhou Summit Crystal Semiconductor Co.,Ltd.,Guangzhou 511458,China)

机构地区：[1]山东大学,晶体材料国家重点实验室,新一代半导体材料研究院,济南250100 [2]广州南砂晶圆半导体技术有限公司,广州511458

出　　处：《人工晶体学报》2022年第9期1745-1748,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51902182,52022052)。

摘　　要：采用物理气相传输(PVT)法扩径获得了8英寸(1英寸=2.54 cm)4H-SiC籽晶,用于8英寸导电型4H-SiC晶体生长,并加工出厚度520μm的8英寸4H-SiC衬底。使用拉曼光谱、全自动显微镜面扫描、非接触电阻率测试仪面扫描和高分辨X射线衍射仪对衬底的晶型、微管、电阻率和结晶质量进行了表征。衬底颜色均一并结合拉曼光谱表明衬底4H-SiC晶型面积比例为100%;衬底微管密度小于0.3 cm^(-2);衬底电阻率范围20~23 mΩ·cm,平均值为22 mΩ·cm;(004)面高分辨X射线摇摆曲线半峰全宽为32.7″,表明衬底良好的结晶质量。8 inch 4H-SiC seed was obtained by physical vapor transport(PVT)method with expansion of boule diameter from 6 inch.8 inch conductivity type 4H-SiC crystal has been grown using 8 inch seed.8 inch 4H-SiC substrate with a thickness of 520μm was processed.Wafers were characterized by Raman spectroscopy,automatic microscope scanning,contactless resistivity measurement and high resolution X-ray diffraction(HRXRD).The polytype of whole wafer with the uniform color is 4H-SiC without other polytypes inclusions.Micropipe density is less than 0.3 cm^(-2).The resistivity range is from 20 mΩ·cm to 23 mΩ·cm,with an average value of 22 mΩ·cm.The full width at half maximum of the rocking curve of(004)diffraction peak is 32.7″,which indicates the good crystalline quality of the crystal.

关 键 词：SiC单晶衬底 8英寸 物理气相传输法 微管密度 电阻率 

分 类 号：O782[理学—晶体学]