Preparation and properties of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)ceramics and polycrystalline films  

作　　者：K.M.Zhidel A.V.Pavlenko 

机构地区：[1]Research Institute of Physics,Southern Federal University No.194 Stachki Avenue,Rostov-on-Don 344090,Russia [2]Federal Research Centre The Southern Scientific Centre of the Russian Academy of Sciences No.41 Chekhova street,Rostov-on-Don 344090,Russia

出　　处：《Journal of Advanced Dielectrics》2022年第1期1-5,共5页先进电介质学报（英文）

基　　金：The study was carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation(State task in the field of scientific activity,scientific project No.(0852-2020-0032)/(BAZ0110/20-3-07IF)).

摘　　要：In this paper,we report the successful growth of 0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)/SrTiO_(3)/Si(001)heterostructure using RFcathode sputtering in an oxygen atmosphere.The deposited films have been investigated by X-ray diffractometry and spectroscopic ellip-sometry(SE).0.5BiFeO_(3)-0.5PbFe_(0.5)Nb_(0.5)O_(3)films on silicon substrates with a strontium titanate buffer layer are single-phase,polycrystalline with a texture in the 001 direction.The unit cell parameters calculated in the tetragonal approximation were c=4.005±0.001Å;a=3.995±0.001Å.The presence in the films of small unit cell deformation arising from different unit cells parameters of the film and substrate is observed.Dielectric properties and capacitance-voltage characteristics have been measured.The ellipsometric parameters have been obtained.

关 键 词：Relaxation non-Debye type process phase transition high-temperature multiferroic polycrystalline thin films 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TQ174.1[化学工程—陶瓷工业]