SiO_(2)空心球-GO复合物提高聚酰亚胺复合薄膜的介电及力学性能  

Dielectric and Mechanical Properties of Polyimide Film Improved by Hybrid of SiO_(2) Hollow Spheres-GO

作　　者：葛静 周宏[1,2] 张宏达 涂雪松 GE Jing;ZHOU Hong;ZHANG Hongda;TU Xuesong(School of Materials Science and Engineering,Ministry of Education,Harbin University of Science and Technology,Harbin 150080,China;Key Laboratory of Engineering Dielectric and Its Application,Ministry of Education,Harbin University of Science and Technology,Harbin 150080,China)

机构地区：[1]哈尔滨理工大学材料科学与化学工程学院,黑龙江哈尔滨150080 [2]哈尔滨理工大学工程电介质及其应用教育部重点实验室,黑龙江哈尔滨150080

出　　处：《绝缘材料》2022年第11期25-29,共5页Insulating Materials

基　　金：黑龙江省自然科学基金资助项目(E2015058)。

摘　　要：采用改进的Hummers法制备氧化石墨烯(GO),以γ-缩水甘油醚氧丙基三甲氧基硅烷(KH560)为改性剂制得改性GO(mGO)。采用改进的Stöber法制备二氧化硅空心球(SHS),以3-氨基丙基三乙氧基硅烷(APTES)为改性剂制得改性SHS(mSHS)。将mGO和mSHS复合制备mSHS-mGO复合物,再以4,4′-二胺基二苯醚(ODA)和均苯四甲酸二酐(PMDA)为单体,采用原位聚合法制备mSHS-mGO/聚酰亚胺(PI)复合薄膜,研究mSHS-mGO复合物对PI薄膜力学和介电性能的影响。结果表明:5%mSHS-0.3%mGO/PI复合薄膜的介电常数为2.26(105 Hz),相比于纯PI薄膜(3.04,105 Hz)降低了26%。3%mSHS-0.3%mGO/PI复合薄膜的拉伸强度和断裂伸长率为86.92 MPa和13.87%,分别比纯PI薄膜(79.00 MPa和9.00%)提高了10%和54%。A graphene oxide(GO)was prepared by modified Hummers method,and a modifie graphene oxide(mGO)was modified by silane coupling agent KH-560.A silica hollow spheres(SHS)was prepared by modified Stober method,and a modified silica hollow spheres(mSHS)was modified by 3-aminopropyltriethoxysilane(APTES).A mSHS-mGO compound was prepared from mGO and mSHS.A series of mSHS-mGO/polyimide(mSHS-mGO/PI)films were fabricated from 4,4′-oxydianiline(ODA),pyromellitic dianhydride(PMDA),and mSHS-mGO via in situ polymerization method.The effects of mSHS-mGO on the mechanical and dielectric properties of polyimide were studied.The results show that the dielectric constant of 5% mSHS-0.3% mGO/PI film is 2.26(105 Hz),which is 26%lower than that of pure PI(3.04,105 Hz).The tensile strength and elongation at break of 3% mSHS-0.3% mGO/PI film are 86.92 MPa and 13.87%,which increase by 10% and 54% compared with the pure PI,respectively.The hybrid of mSHS-mGO improves the tensile strength and decreases the dielectric constant of mSHS-mGO/PI films.

关 键 词：二氧化硅空心球 氧化石墨烯 聚酰亚胺 介电性能 力学性能 

分 类 号：TM215.3[一般工业技术—材料科学与工程]