Pulsed laser deposition of amorphous InGaZnO_(4)as an electron transport layer for perovskite solar cells  

作　　者：Shanming Ke Bukui Du Zhenggang Rao Chun Huang Peng Lin Yongming Hu Longlong Shu 

机构地区：[1]School of Materials Science and Engineering Nanchang University,Nanchang 330031,P.R.China [2]Jiangxi Key Laboratory for Two-dimensional Materials and Devices and Jiangxi Engineering Laboratory for Advanced Functional Thin Films Nanchang University,Nanchang 330031,P.R.China [3]Shenzhen Key Laboratory of Special Functional Materials College of Materials Science and Engineering Shenzhen University,Shenzhen 518060,P.R.China [4]Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices Hubei University,Wuhan 430062,P.R.China

出　　处：《Journal of Advanced Dielectrics》2019年第5期93-98,共6页先进电介质学报（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.51972157,11964017);the Jiangxi’s Natural Science Foundation(No.20192ACB21017);the financial support from Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices(No.K201803).

摘　　要：Hybrid perovskite solar cells(PSCs)have been intensively studied in recent years because of their high efficiency and low costs.For PSCs,the electron transport layer(ETL)is a key for its photoelectric conversion efficiency.Here we demonstrate the application of amorphous InGaZnO_(4)thin films as ETL for efficient PSCs by pulsed laser deposition(PLD).The PSC device using such InGaZnO_(4)amorphous film as ETL has achieved an efficiency of 15.1%.The outstanding performance is attributed to the excellent properties of amorphous InGaZnO_(4)oxide thin films,including high electron mobility and high transparency,what is more,the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process.Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.

关 键 词：Pulsed laser deposition amorphous InGaZnO_(4) electron transport layer perovskite solar cells 

分 类 号：TG1[金属学及工艺—金属学]